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Preparation method of ferroferric oxide and lanthanum-doped bismuth titanate composite magnetoelectric film

A technology of triiron tetroxide and bismuth titanate, which is applied in the field of multiferroic magnetoelectric composite thin film material preparation, can solve the problems of difficult preparation process and oxidation conditions, achieve large remanent polarization, low preparation temperature, and expand the scope of research Effect

Inactive Publication Date: 2013-03-20
SOUTHEAST UNIV
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Problems solved by technology

[0004] So far, due to the difficulties in the preparation process and oxidation conditions of the experiment, Fe 3 o 4 and Bi 3.25 La 0.75 Ti 3 o 12 (BLT) compounded Fe 3 o 4 / Bi 3.25 La 0.75 Ti 3 o 12 (Fe 3 o 4 / BLT) magnetoelectric composite thin film materials, no relevant reports have been seen yet

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  • Preparation method of ferroferric oxide and lanthanum-doped bismuth titanate composite magnetoelectric film
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[0022] The preparation method of the ferric oxide and bismuth titanate doped lanthanum composite magnetoelectric thin film of the present invention is characterized in that the method comprises the following steps:

[0023] 1. Preparation of Fe 2 O 3 and Bi 3.25 La 0.75 T i3 O 12 (BLT) target

[0024] 1. Bi 3.25 La 0.75 Ti 3 O1 2 Preparation of (BLT) targets

[0025] a) Ingredients: The reactant raw material is Bi 2 O 3 ,La 2 O 3 , TiO2; the three raw materials are mixed in a molar ratio of 13:3:24. Due to the volatility of Bi, an excess of Bi is generally used in the experiment. 2 O 3 To compensate for the loss of Bi, 5-20% of Bi2O3 is added to the raw material.

[0026] b) Put the mixed raw materials into the agate tank, add acetone into the ball mill tank, add agate balls, seal and fix it on the ball mill, the ball milling time is more than 15h, the longer the grinding time, the finer the BLT powder, and the better the effect.

[0027] c) Press the ground r...

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Abstract

The invention relates to a preparation method of a ferroferric oxide and lanthanum-doped bismuth titanate composite magnetoelectric film, which is characterized in that a ferroelectric lanthanum-doped bismuth titanate film and a ferromagnetic ferroferric oxide film are effectively synthesized, thus preparing the multiferroic magnetoelectric composite film material. The preparation method comprises the following specific steps: 1, preparing Fe2O3 and Bi3.25La0.75Ti3O12 (BLT) target materials; and 2, using a pulse laser sputtering deposition system to prepare the Fe3O4 / BLT multiferroic magnetoelectric composite film on a Pt / Ti / SiO2 / Si substrate. The Fe3O4 / BLT multiferroic magnetoelectric composite film material fills up the blank of compounding Fe3O4 and BLT into the multiferroic magnetoelectric composite material and widens the research range of the magnetoelectric composite film material.

Description

technical field [0001] The invention relates to a preparation method for preparing a multiferroic magnetoelectric composite thin film material by effectively synthesizing a ferroelectric thin film bismuth titanate doped with lanthanum and a ferrimagnetic thin film triiron tetroxide, which belongs to the multiferroic The technical field of preparation of magnetic and electrical composite thin film materials. Background technique [0002] Due to the fact that multiferroic materials not only have a single ferrous property (such as ferroelectricity, ferromagnetism and ferroelasticity), but also generate new magnetoelectric effects due to the coupling and synergy between different ferrous properties, the development of multiferroic materials based on ferroelectric- Technologies such as novel information storage processing of magnetic integration effects and magnetoelectric devices offer great potential for potential applications. Among them, the magnetoelectric composite thin fi...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/462C04B35/622
Inventor 吴秀梅翟亚孙弘扬欧慧灵
Owner SOUTHEAST UNIV
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