Amorphous FeTiO/SiO2/p-Si heterostructure material and preparation method thereof

A heterogeneous structure, p-si technology, applied in the coating process of metal materials, the application of magnetic films to substrates, ion implantation plating, etc., can solve the problem of low spin injection efficiency and mismatching of magnetic film resistivity to achieve obvious cost and technical advantages, high target utilization rate, and simple target selection

Inactive Publication Date: 2016-08-10
TIANJIN UNIVERSITY OF TECHNOLOGY
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Problems solved by technology

However, the spin injection efficiency in the heterostructure formed by the current magnetic thin film material and Si base is not high, mainly due to the mismatch between the resistivity of the magnetic thin film and Si

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  • Amorphous FeTiO/SiO2/p-Si heterostructure material and preparation method thereof
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  • Amorphous FeTiO/SiO2/p-Si heterostructure material and preparation method thereof

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Embodiment

[0026] A kind of amorphous FeTiO / SiO 2 / p-Si heterostructure material, composed of p-Si thin film layer, SiO 2 The thin film layer and the amorphous FeTiO thin film layer form a heterogeneous stacked structure FeTiO / SiO 2 / p-Si, the thickness of each thin film layer is 330 μm for p-Si thin film layer, SiO 2 Thin film layer 2nm, amorphous FeTiO thin film layer 350nm.

[0027] A kind of said amorphous FeTiO / SiO 2 The preparation method of / p-Si heterostructure material is prepared by an ultra-high vacuum three-target co-deposition magnetron sputtering coating machine produced by the Shenyang Scientific Instrument Development Center of the Chinese Academy of Sciences. The Si substrate is p-Si(100) with single-sided planing For a single wafer, the resistivity at room temperature is 0.2Ω, the thickness is 330μm, the area is 3mm×3mm, and the thickness of the natural oxide layer is 2nm. The steps are as follows:

[0028] 1) Install a Ti target with a purity of 99.99% and an Fe ta...

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Abstract

A kind of amorphous FeTiO / SiO 2 / p‑Si heterostructure material, consisting of p‑Si thin film layers, SiO 2 The thin film layer and the amorphous FeTiO thin film layer form a heterogeneous stacked structure FeTiO / SiO 2 / p‑Si, the thickness of each thin film layer is 330 μm for p‑Si thin film layer, SiO 2 The thin film layer is 2nm, and the amorphous FeTiO thin film layer is 350nm; it is prepared by ultra-high vacuum three-target co-deposition magnetron sputtering coating machine; it is used in semiconductor spintronics devices, including magnetic field controlled switches, magnetic field sensors and spin diodes. The invention has the advantages of preparing by sputtering method, simple target selection and high target utilization rate, and obvious cost and technical advantages in industrial production; heterogeneous structure materials have high magnetoresistance effect.

Description

technical field [0001] The patent of the invention relates to a preparation method of an amorphous heterostructure material with a huge positive magnetoresistance effect, especially an amorphous FeTiO / SiO 2 / p-Si heterostructure material and its preparation method. Background technique [0002] In recent years, spintronic materials have attracted much attention due to their great application prospects in magnetic information storage and reading. The 2007 Nobel Prize in Physics was awarded to Albert Fert and Peter Grünberg, the pioneers of spintronics. Now, how to obtain high spin-polarized current is still one of the hot issues in the field of spintronics. The methods to obtain high spin injection mainly include selecting electrode materials with high spin polarizability and preparing dilute magnetic semiconductor materials. [0003] In order to apply spintronic devices to practical products, they need to be combined with existing Si semiconductor technology. However, th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01F10/187H01F41/14C23C14/35C23C14/08
CPCH01F10/187C23C14/0036C23C14/08C23C14/352H01F41/14
Inventor 王晓姹
Owner TIANJIN UNIVERSITY OF TECHNOLOGY
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