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A hfte5-δ crystal with huge magnetoresistance and its growth method

A growth method and magnetoresistance technology, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of no measured linear conductance, no superlattice structure diffraction spots, small resistivity anisotropy, etc. , to achieve significant application value, optimize the crystal growth process, and optimize the effect of crystal performance

Active Publication Date: 2019-03-22
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the XRD experiment, people did not find obvious diffraction spots unique to the superlattice structure, nor did they measure the existence of linear conductance, and the anisotropy of the measured resistivity was also small. These findings obviously contradicted the CDW interpretation

Method used

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  • A hfte5-δ crystal with huge magnetoresistance and its growth method
  • A hfte5-δ crystal with huge magnetoresistance and its growth method
  • A hfte5-δ crystal with huge magnetoresistance and its growth method

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Experimental program
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Effect test

Embodiment 1

[0034] Embodiment 1, transport agent is I 2 HfTe 5 Powder as raw material to grow HfTe 5-δ the crystal

[0035] Weigh 0.02mol of Hf powder (3.5698g) and 0.1mol of Te powder (12.7600g), mix them evenly and put them into a quartz tube that has been cleaned and dried beforehand. The quartz tube was sealed with a flame, and the high-temperature solid-state sintering reaction was carried out at 500 °C for 5 days to prepare HfTe 5 Powder, as a growth material. Then weigh 0.002mol (1.6330g) of HfTe 5 Powder with 100 mg of Delivery Agent I 2 , and respectively add a series of excess Te powder (0.5%, 0.0064g; 1%, 0.0127g; 3%, 0.0383g), grind and mix the three and put them into the prepared quartz tube (length 10cm, diameter 2cm ). After the quartz tube is sealed, it is placed in a tube furnace with two temperature zones or multiple temperature zones, and the growth temperature program is set at 400°C (growth end) to 550°C (raw material end). After a 10-day growth cycle, the seri...

Embodiment 2

[0037] Embodiment 2, transport agent is I 2 Growth of HfTe with stoichiometric ratio of Hf powder and Te powder as raw materials 5-δ the crystal

[0038] Directly weigh 0.002mol of Hf powder (0.3570g) and 0.01mol of Te powder (1.2760g) as growth materials. Then weigh 100mg of I 2 As a transport agent, add a series of excess Te powder (0.5%, 0.0064g; 1%, 0.0127g; 3%, 0.0383g), grind and mix the three into the prepared quartz tube (length 10cm, diameter 2cm). After the quartz tube is sealed, place it in a tube furnace with two temperature zones or multiple temperature zones. Set the growth temperature program to 400°C (growth end) ~ 550°C (raw material end). After a 10-day growth cycle, the series can be obtained by natural cooling. Centimeter-scale HfTe with giant magnetoresistance 5-δ large single crystals, such as figure 1 shown. EDS test results show that three kinds of HfTe 5-δ The crystal values ​​are 0.03, 0.07, 0.13, respectively. The magnetoresistance effect te...

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Abstract

The invetnion discloses a HfTe5-delta crystal with giant magnetoresistance and a growth method thereof. The HfTe5-delta crystal is ribbon-shaped; the length range of the HfTe5-delta crystal is 0.5-2cm; and the value of delta is 0.02-0.12. When the value of delta is 0.06, the highest magnetoresistance of the HfTe5-delta crystal at the temperature of 2K under the magnetic field of 9T is 2.5*10<4>%, and the highest magnetoresistance of the HfTe5-delta crystal at room temperature under the magnetic field of 9T is 33%. The HfTe5-delta crystal and the method have the beneficial effects that a vapor phase transporting method is adopted for preparing the HfTe5-delta crystal; I2, Br2, TeI4, TeBr4 or TeC14 are used as transporting agents; a vacuum-tight quartz tube is used as a growth container; the crystal grows in the temperature zone of 400 DEG C (growth end)-550 DEG C(raw material end); a growth technology is optimized by adding excessive amount of Te powder to growth raw materials, so that the HfTe5-delta crystal with the extremely high magnetoresistance is obtained; and the HfTe5-delta crystal with the extremely high magnetoresistance has important research value in the term of novel magnetic resistance device application.

Description

technical field [0001] The invention belongs to the technical field of crystal growth, in particular to a HfTe with huge magnetoresistance 5-δ Crystals and their growth methods. Background technique [0002] The magnetoresistance effect (Mgnetoresistance, MR) refers to the effect that the resistance value of a conductor or semiconductor material changes under the action of a magnetic field, and the expression is: [0003] [0004] where B represents the external magnetic field, ρ xx (B) and ρ xx (B) respectively represent the resistivity under the applied magnetic field B and no magnetic field, and the magnetoresistance value MR reflects the change of the system resistance under the applied magnetic field and without applied magnetic field. The huge magnetoresistance effect has been widely used in the magnetic head of the hard disk and various sensors. At present, the related basic and applied research has become a research hotspot. The giant magnetoresistance effect ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/46C30B25/00
CPCC30B25/00C30B29/46
Inventor 姚淑华吕洋洋李啸陈延彬周健陈延峰
Owner NANJING UNIV
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