A parasitic PNP device structure and manufacturing method using sige HBT technology

Abstract

The invention discloses a method of manufacturing a parasitic PNP (Plug and Play) device structure through adopting SiGe HBT (Heterojunction Bipolar Transistor) technology. The method comprises the steps of: etching a shallow groove on a P type substrate as isolation; injecting boron ions at the bottom of the shallow groove, and conducting thermal treatment to form an N type a pseudo buried layer; injecting phosphate ions at the bottom of the shallow groove, and conducting the thermal treatment to form a P type pseudo buried layer; conducting collector region injection on the P type substrate; forming an epitaxial layer above a collector region; and leading an emitter electrode from the epitaxial layer through a contact hole, leading out a base electrode from the N type pseudo buried layer, and leading out a collector electrode from the P type pseudo buried layer through a deep contact hole. The invention further discloses a parasitic PNP device structure adopting SiGe HBT technology. According to the parasitic PNP device structure adopting SiGe HBT technology, and the manufacturing method thereof, the etching technology of the shallow groove is simple, and can be used for output devices in high-speed and high-gain circuits.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuits, in particular to a parasitic PNP device structure using a SiGeHBT process. The invention also relates to a manufacturing method of the parasitic PNP device structure of the SiGeHBT process. Background technique [0002] In RF applications, with the advancement of technology, higher and higher device characteristic frequencies are required. Although RFCMOS (RF Complementary Metal Oxide Semiconductor Field Effect Transistor) can achieve higher frequencies in advanced process technologies, it is still difficult to fully meet the requirements. For radio frequency requirements, if it is difficult to achieve a characteristic frequency above 40 GHz, the cost of research and development of advanced technology is very high to achieve a characteristic frequency above 40 GHz. Compound semiconductors can realize very high characteristic frequency devices, but due to the disadvantages of high...

AI Technical Summary

Problems solved by technology

At present, this conventional SiGeHBT device is widely used, but it has the disadvantages of complex process and high manufacturing cost

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