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Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip

A kind of optoelectronic semiconductor and semiconductor technology, which is applied in the direction of semiconductor devices, electric solid-state devices, lamp circuit layout, etc., and can solve problems such as consumption monitoring

Active Publication Date: 2016-10-26
OSRAM OPTO SEMICON GMBH & CO OHG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, just in the case of devices with a plurality of light-emitting diodes, the photodiode cannot or can only monitor the output signal of each individual light-emitting diode with great effort.

Method used

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  • Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip
  • Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip
  • Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip

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Embodiment Construction

[0047] Identical, similar or identically acting elements are provided with the same reference symbols in the figures.

[0048] The figures and the size ratios of the elements shown in the figures to one another are not to be regarded as true to scale. Conversely, individual elements and in particular layer thicknesses may be shown exaggerated for better visibility and / or for better understanding.

[0049] A first embodiment of an optoelectronic semiconductor chip is in Figure 1B is shown in schematic top view, and in Figure 1A is shown in the corresponding schematic sectional view taken along the line AA'.

[0050] The semiconductor chip 1 has a semiconductor body 2 with a semiconductor layer sequence. The semiconductor body is fastened to the first main surface 51 of the carrier 5 by means of a connection layer 6 , for example an adhesive layer or a solder layer. The semiconductor body 2 has an emission region 23 and a detection region 24 . The emission region and the d...

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PUM

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Abstract

An optoelectronic semiconductor chip (1) is proposed having a carrier (5) and a semiconductor body (2) arranged on the carrier (5) with a semiconductor layer sequence, wherein the semiconductor An emission area (23) and a detection area (24) are formed in the body (2). The semiconductor layer sequence comprises an active region ( 20 ) which is arranged between a first semiconductor layer ( 21 ) and a second semiconductor layer ( 22 ) and in an emission region ( 23 ) for generating radiation. The first semiconductor layer ( 21 ) is arranged on the side of the active region ( 20 ) facing away from the carrier ( 5 ). The emission region (23) has a recess (25), which extends through the active region (20); the first semiconductor layer (21) is in the emission region (23) via a first connection layer (31) to a first contact Part (41) is electrically conductively connected, wherein the first connection layer (31) extends from the first semiconductor layer (21) in the direction of the carrier (5) in the recess (25); the second semiconductor layer (22) via the second connection layer ( 32 ) is electrically conductively connected to the second contact ( 42 ). The detection region ( 24 ) is electrically conductively connected to the additional contact ( 43 ). Furthermore, a method for producing an optoelectronic semiconductor chip is proposed.

Description

technical field [0001] The present application relates to an optoelectronic semiconductor chip and a method for producing an optoelectronic semiconductor chip. [0002] This application claims priority from German patent application 10 2010 034 665.9, the disclosure of which is hereby incorporated by reference. Background technique [0003] In optoelectronic components such as light-emitting diodes, aging phenomena such as aging of the semiconductor chip or of the luminescence conversion material can lead to changes in the emission properties, for example to a reduction in the radiation power and / or to a change in the color coordinates. In order to compensate for this effect, photodiodes, the signals of which are supplied to the control device for the operating parameters of the light-emitting diodes, can additionally be incorporated in the arrangement of the light-emitting diodes. However, just in the case of devices with a plurality of light-emitting diodes, the photodiod...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L25/16H05B37/03H01L31/173H01L27/15H01L33/00H01L33/38
CPCH01L27/15H01L31/153H01L2924/0002H01L33/382H01L33/0093H01L2924/00H01L33/38H01L33/36H01L33/20H01L33/22H01L33/62
Inventor 于尔根·莫斯布格尔克里斯托夫·诺伊罗伊特诺温·文马尔姆
Owner OSRAM OPTO SEMICON GMBH & CO OHG