Simulated measurement method of current characteristics of insulated gate bipolar transistor

Abstract

The invention discloses a simulated measurement method of current characteristics of an insulated gate bipolar transistor. The simulated measurement method of the current characteristics of the insulated gate bipolar transistor includes the following steps of: step 10, obtaining test conduction characteristic and output characteristic of the insulated gate bipolar transistor, step 20, establishing a simulated circuit of an internal integrated model of an simulated program, step 30, establishing a corresponding relationship between an actual collector voltage and a corrected collector voltage, step 40, obtaining correction factors of the actual collector voltage and the corrected collector voltage, step 50, stimulatingly establishing a first-time corrected actual conduction characteristic, step 60, establishing a corresponding relationship between an actual grid voltage and a corrected grid voltage, step 70, obtaining correction factors of the actual grid voltage and the corrected grid voltage, and step 80, stimulatingly establishing a second-time corrected actual output characteristic. The simulated measurement method of the current characteristics of the insulated gate bipolar transistor solves the problem that current characteristics of insulated gate bipolar transistor integrated inside of a simulation program with intergraded circuit emphasis (PSPICE) are low in degree of accuracy.

Description

technical field [0001] The invention relates to the simulation field of high-voltage power semiconductor devices, in particular to a method for measuring the current of an insulated gate bipolar transistor of a high-voltage power device in an integrated circuit simulation program PSPICE. Background technique [0002] With the continuous development of electronic power technology, power semiconductor devices, as the basic electronic components for energy control and conversion in electronic power systems, have been more and more widely used. The insulated gate bipolar device (insulated gate bipolar transistor) that appeared in the 1980s combines the high current handling capability of the high voltage triode (BJT) and the gate voltage control characteristics of the insulated gate field effect transistor (MOSFET), with input With the advantages of high impedance, fast switching speed, low driving power, large current driving capability and low on-resistance, it is an almost id...

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Problems solved by technology

[0005] Technical problem: The present invention provides a method for measuring the current characteristics of an insulated gate bipolar transistor based on simulation. The method is simple and effective, and can solve the problem of simulating the actual conduction characteristics of the insulated gate bipolar transistor integrated in the integrated circuit simulation program PSPICE. , the problem that the actual output characteristic accuracy is not high

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