Pixel structure and its manufacturing method

Abstract

The invention discloses a picture element structure. The picture element structure comprises a gate electrode, a capacitor electrode, a capacitor transparency electrode, a gate insulating layer, a semiconductor layer, a source electrode, a drain electrode, a protective layer and a picture element electrode. The gate electrode and the capacitor electrode are arranged on a substrate in a matched mode. The capacitor transparency electrode covers the capacitor electrode and part of the substrate. The gate insulating layer covers the gate electrode and the capacitor transparency electrode. The gate insulating layer is provided with an opening, wherein part of the capacitor transparency electrode is exposed out of the opening. The source electrode and the drain electrode are exposed out of part of the semiconductor layer. The protective layer covers the source electrode, the drain electrode, the gate insulating layer and the capacitor transparency electrode exposed out of the opening. The protective layer is provided with a contact window, wherein part of the drain electrode is exposed out of the contact window, and the picture element electrode penetrates through the contact window and is in electric connection with the drain electrode. An overlapped area is arranged between the picture element electrode and the capacitor transparency electrode exposed out of the opening to from a storage capacitor.

Description

technical field [0001] The present invention relates to a pixel structure and its manufacturing method, and in particular to a pixel structure with a storage capacitor and its manufacturing method. Background technique [0002] Due to the increasing demand for displays and the rise of the concept of green environmental protection in recent years, thin film transistor liquid crystal displays (thinfilmtransistorliquidcrystaldisplay, TFT-LCD) with superior characteristics such as high image quality, good space utilization efficiency, low power consumption, and no radiation have gradually become The mainstream of the display market. In order to meet the needs of users, the performance of thin film transistor liquid crystal displays is constantly moving towards high contrast (high contrast), no gray scale inversion (no gray scale inversion), small color shift (little color shift), high brightness (high luminance), high color richness, high color Features such as saturation, fast...

AI Technical Summary

Problems solved by technology

Since the capacitance value of the storage capacitor is closely related to the charging and discharging characteristics of TFT-LCD pixels, if the storage capacitor is too large, it may cause insufficient charging; if the storage capacitor is too small, it will easily cause flickering of the display screen

However, the scan wires, data wires and bottom electrode wires of storage capacitors used in TFT-LCD thin film transistor array substrates are generally made of light-shielding metal wires, and metal wires will block light from passing through, which greatly Limits the light utilization efficiency of the product and increases the power consumption of the backlight module

If the light utilization efficiency of TFT-LCD is improved by reducing the width of scanning wiring and data wiring, the RC load of TFT-LCD wiring will increase, resulting in distortion of signal transmission; and by reducing the width of storage capacitor electrodes Improving the light utilization efficiency of TFT-LCD may cause the display screen to flicker due to the storage capacitor not meeting the requirements, which will affect the display quality

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