A temperature-adjustable plasma confinement device
A plasma and confinement device technology, applied in the direction of discharge tubes, electrical components, circuits, etc., can solve the problems of thermal deformation of channels, difficulty in ensuring uniformity, and affecting exhaust effects, etc., to meet production needs and maintain good uniformity Effect
Active Publication Date: 2016-02-03
ADVANCED MICRO FAB EQUIP INC CHINA
View PDF5 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Since the plasma confinement device is close to the plasma, the temperature of the plasma confinement device will continue to rise as the reaction progresses, causing several channels to be deformed by heat and affecting the exhaust effect, resulting in The uniformity of treatment is difficult to guarantee
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment 2
[0029] Example 2: Figure 4Another temperature-adjustable plasma confinement device 20 is shown, comprising a mounting area 22 and a venting area 21, the mounting area 22 includes a mounting wall 25, the venting area 21 includes a substantially horizontal upper surface and is separated by a spacer 27. Several gas passages, the gas passages described in this embodiment are substantially perpendicular to the upper surface of the ventilation area 21, the gas passages shown in this embodiment can be substantially circular gas passages 26, the gas passages The diameters are roughly the same; it can also be a strip-shaped gas through hole 28, such as Figure 5 As shown, the shape and size of the gas through holes 28 should be substantially consistent.
[0030] The heat exchange pipe 7 is arranged around the gas through hole 26 or the gas through hole 28 of the ventilation area, and the heat exchange pipe 7 surrounds one circle or more than one circle inside the isolation part 27 of...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention relates to a temperature adjustable plasma restriction device which is designed to be a ventilation area and an installation area. The ventilation area is divided into a plurality of gas channels in a separating mode through separating components. A heat exchange pipe is arranged at the periphery of the gas channels. Heat exchange liquid is filled in the heat exchange pipe. The heat exchange pipe comprises at least one inlet and one outlet. The inlet and the outlet are connected with a heat exchange control device so that temperature of the plasma restriction device can be adjusted. The temperature of the plasma restriction device does not rise along with reaction time, according to an order of the heat exchange control device, the temperature of the plasma restriction device can be controlled to maintain a constant number between 50 DEG C to 90 DEGC, and therefore evenness in different areas of the same machining workpiece or among different machining workpieces is maintained to be good and production requirements are satisfied.
Description
technical field [0001] The invention relates to the manufacturing field of semiconductor devices, in particular to an internal device of a plasma etching chamber. Background technique [0002] The plasma processing device uses the working principle of the vacuum reaction chamber to process the semiconductor substrate and the substrate of the plasma flat panel. The working principle of the vacuum reaction chamber is to pass a reaction gas containing an appropriate etchant or deposition source gas into the vacuum reaction chamber, and then input radio frequency energy to the vacuum reaction chamber to activate the reaction gas to ignite and maintain the plasma body, in order to respectively etch the material layer on the surface of the substrate or deposit the material layer on the surface of the substrate, and then process the semiconductor substrate and the plasma plate. For example, capacitive plasma reactors have been widely used to process semiconductor substrates and di...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/02H01J37/305
Inventor 周旭升王晔李菁徐骅吕军王洪青
Owner ADVANCED MICRO FAB EQUIP INC CHINA