Optical proximity effect correction method and corresponding mask pattern forming method

Abstract

An optical proximity correction method comprises: simulating an expected photoetch pattern (200); obtaining a difference between the simulated photoetch pattern and the expected photoetch pattern (201); adjusting the expected photoetch pattern according to the difference, the adjustment comprising obtaining, according to a preset relation of differences between the simulated photoetch pattern and the expected photoetch pattern to adjustment factors, an adjustment factor corresponding to the difference between the simulated photoetch pattern and the expected photoetch pattern (202); multiplying the difference with the adjustment factor to obtain an adjustment amount of the expected photoetch pattern (203); and adjusting the expected photoetch pattern according to the adjustment amount (204). The method prevents deviation from being generated after an expected photoetch pattern is used to form a photoetch pattern on the surface of a silicon wafer.

Description

technical field [0001] The invention relates to a manufacturing process of a semiconductor device, in particular to deviation processing between a photolithographic pattern and a mask pattern. Background technique [0002] Photolithography is the main process in the manufacture of integrated circuits. Photolithography is mainly to realize the transfer of the pattern on the mask plate (hereinafter referred to as the mask pattern) to each layer of material on the silicon surface. The projected light propagates to the silicon wafer after passing through the mask pattern, so that a lithography pattern related to the mask pattern is obtained on the silicon wafer. For lithography, the mask pattern is equivalent to an obstacle on the propagation route. According to the principle of light wave diffraction and interference, light waves will diffract when passing through the mask, and the light waves at different positions of the mask will also interfere, so the light intensity dist...

AI Technical Summary

Problems solved by technology

[0005] One way to avoid the above-mentioned deviation is the optical proximity correction method (OPC). During the simulation process using this method, the designed lithographic pattern is continuously corrected so that the corrected designed lithographic pattern is formed as After the mask pattern, the deviation between the mask pattern and the lithographic pattern formed after the final transfer to the silicon wafer is as small as possible, but the current optical proximity effect correction method is not accurate enough

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