A kind of magnetron sputtering source and magnetron sputtering equipment

Abstract

The invention provides a magnetron sputtering source and a magnetron sputtering apparatus. The magnetron sputtering source comprises a target material, a fixed part, a magnetron and a driving mechanism, the target material and the driving mechanism are fixed on the fixed part, the magnetron is connected with the driving mechanism, the magnetron is close to the surface of the target material, the magnetron scans the surface of the target material under the driving of the driving mechanism, the driving mechanism comprises a rotary driving mechanism and a linear driving mechanism, the rotary driving mechanism is used for driving the rotary movement of the magnetron on the surface of the target material, the linear driving mechanism is used for driving the linear reciprocating movement of the magnetron on the surface of the target material, and the rotary movement and the linear reciprocating movement of the magnetron on the surface of the target material are simultaneously carried out under the common action of the rotary driving mechanism and the linear driving mechanism. The magnetron sputtering source can accurately control the scanning locus of the magnetron and the retention times of the magnetron in different positions, so the corrosion of the target material is uniform, and the utilization rate of the target material is increased.

Description

technical field [0001] The invention belongs to the field of magnetron sputtering equipment, and relates to a magnetron sputtering source and magnetron sputtering equipment. Background technique [0002] The magnetron sputtering process is widely used to prepare various thin films, such as barrier layers for integrated circuits. figure 1 It is a schematic diagram of a typical magnetron sputtering equipment. see figure 1 , the magnetron sputtering equipment includes a reaction chamber 1 and a magnetron sputtering source arranged on the top of the reaction chamber 1 . Wherein, the magnetron sputtering source includes a target material 2, a magnetron 3 and a drive mechanism 4 for driving the magnetron 3 to move, the magnetron 3 is arranged above the target material 2, and the magnetron is driven by the drive mechanism 4 3 Scanning on the surface of the target material 2, so as to restrict the trajectory of the charged particles in the plasma in the reaction chamber 1, thereb...

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Problems solved by technology

However, in actual use, since the spring is prone to fatigue, the corresponding relationship between the force of the spring and the centrifugal force is likely to change, so it is difficult to accurately control the scanning trajectory of the magnetron through the rotational speed of the drive shaft; and , the residence time of the magnetron at different positions cannot be controlled by using the rotational speed of the drive shaft, resulting in uneven corrosion of the target, thereby reducing the utilization rate of the target

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