Over-erasing processing method and processing system of nonvolatile memory
A technology of non-volatile memory and processing method, which is applied in the field of semiconductor memory, can solve the problems of reducing the overall efficiency of testing and taking a long time, and achieve the effects of saving processing time, improving efficiency, and improving accuracy
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Problems solved by technology
 refer to figure 1 , showing a first embodiment of a non-volatile memory over-erasing processing method of the present invention, including the following steps:
 Step 101 , applying a processing voltage greater than a target threshold voltage to word lines (wordline, WL) of all memory cells in a logic block.
 By applying a processing voltage greater than the target threshold voltage on the word lines of all memory cells in the logic block, the threshold voltage of the memory cells can be increased, and the operation can shorten the overall over-erase processing time of a logic block, thereby improving over-erase removal efficiency.
 Wherein, the magnitude of the processing voltage is determined by the sum of the target threshold voltage and the overdrive voltage. The target threshold voltage is the minimum value of the threshold voltage range that satisfies the normal erasing state in a process flow. For example, the threshold voltage of "less ...
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