Method for verifying and storing flash memory

Abstract

The invention discloses a method for verifying and storing a flash memory. The method comprises the following steps: verifying a storage block which corresponds to a physical address stored in a data field of each node in a chain table; deleting nodes storing physical addresses of bad blocks in the data fields from the chain table; dividing to-be-stored data into N data blocks by taking the size of each block in storage unit as a unit, wherein N is an integer which is greater than or equal to 1; storing the to-be-stored data into the N storage blocks of the storage unit, wherein the N storage blocks are determined by the chain table and the current node address; and updating the current node address to enable the current node address to indicate the address of the node of which the data field stores the physical address of the last data storage block.

Description

technical field [0001] The invention relates to the field of data storage, in particular to a flash memory verification storage method. Background technique [0002] When data is transmitted between the server equipment and the terminal equipment or between the internal devices of the computer equipment, it is especially necessary to use the storage equipment as a buffer equipment. At present, the more common storage devices are flash memory and electrically erasable programmable read-only memory (EEPROM). These two storage devices have the following advantages and disadvantages respectively: [0003] First of all, the advantages of flash memory are large capacity and low price; the disadvantage is that the erasing and writing speed is slow, and it must be erased first and then written. The minimum unit of each erasing is a BANK, that is, 64KB. Moreover, the number of rewritable times per unit storage space is small, about 100,000 times; [0004] Secondly, the disadvantage...

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Problems solved by technology

[0006] However, if the flash memory is used to store user data in consideration of cost, there will be the following problems: the flash erase and write speed is slow, and most of the SPI flash memory must use BANK (64KB) as the minimum erase unit, and it takes more than 100ms to erase once. If the number of times is too high, it will inevitably affect the service life of the flash memory storage device, and when storing data, the speed is also relatively slow.

[0007] On the other hand, due to special reasons such as unexpected power failures, there will be bad blocks in the flash storage device, and the occurrence of bad blocks will cause incalculable losses to the storage of the flash storage device. Therefore, a method is needed to avoid the occurrence of bad blocks. Storage failure caused by

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