Magnetic nanowire array thin film and preparation method thereof

A magnetic nanometer and line array technology, applied in ion implantation plating, metal material coating process, coating, etc., to meet the needs of different operating frequencies, simple operation, and good insulation

CN103276360BInactive Publication Date: 2015-02-18UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Publication Date
2015-02-18
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a magnetic nanowire array thin film and a preparation method thereof, and belongs to the technical field of electronic function materials. The magnetic nanowire array thin film comprises an MgAl2O4 monocrystal substrate, a Pb (Zr 0.52 Ti 0.48) O3 matrix and Ni Fe 2O4 nanowires, wherein the Ni Fe 2O4 nanowires are uniformly distributed in the Pb (Zr 0.52 Ti 0.48) O3 matrix to form the magnetic nanowire array thin film deposited on the MgAl2O4 monocrystal substrate (001) orientation surface. The thin film adopts the PZT-NFO target and (001) orientated MgAl2O4 monocrystal substrate, and is prepared by a 90-degree off-axis magnetron sputtering technology, so that the thin film has the characteristics of small ferromagnetic resonance line width and lattice mismatch, high ferromagnetic resonance frequency and capability of self-assembled epitaxial growth, and is an important material used for a microwave nonreciprocity device; and the preparation method is easy to implement, parameters are convenient to control, the structure is simple, and the cost is low.
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Description

technical field

[0001] The invention belongs to the technical field of electronic functional materials, and relates to a magnetic nanowire array film and a preparation method thereof Background technique

[0002] Spinel ferrite materials have good soft magnetic and gyromagnetic properties, and are irreplaceable in radio frequency / microwave non-reciprocal devices. However, the application frequency of its block material is low, and the isolator and circulator made of ferrite material are bulky, mainly because a bias magnetic field needs to be added to adjust the operating frequency.

[0003] Ferromagnetic nanoarrays have great potential applications in radio frequency, microwave non-reciprocal devices, noise suppressors, etc. due to their shape anisotropy that can significantly increase the ferromagnetic resonance frequency. At present, Ni, Fe, NiFe, CoFe nanowires, which are the most researched, are grown in alumina hollow templates by electroplating, but tests show that du...

Examples

Embodiment Construction

[0035] A magnetic nanowire array thin film, such as figure 1 shown, including MgAl 2 o 4 (MAO) single crystal substrate 3, Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) matrix 2 and NiFe 2 o 4 (NFO) nanowires1. Among them, the MgAl 2 o 4 (MAO) single crystal substrate 3 is (001) oriented and surface polished MgAl 2 o 4 single crystal substrate; the NiFe 2 o 4 The nanowires 1 are uniformly distributed in Pb(Zr 0.52 Ti 0.48 )O 3 In the substrate 2, a magnetic nanowire array film is formed; the magnetic nanowire array film is deposited on the MgAl 2 o 4 (MAO) on the (001) oriented surface of the single crystal substrate 3 .

[0036] Further, the NiFe 2 o 4 The diameter of the nanowire 1 is between 70nm and 250nm, and the length is between tens of nanometers and several microns.

[0037] In the magnetic nanowire array thin film provided by the invention, the PZT substrate has high insulation and piezoelectricity at the same time, and the NFO nanostructure has high insulation, ...