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Large scale integrated chip of high power thermoelectric conversion module and its manufacturing process

A large-scale integrated chip and thermoelectric conversion technology, which is applied to thermoelectric device node lead-out materials, thermoelectric devices and circuits that only use the Peltier or Seebeck effect, etc., can solve the problems of expensive plasma spraying equipment, waste of materials, and difficult control of parameters, etc. problems, to achieve the effect of solving metal electrode diffusion and large-scale precision machining, easy control of process parameters, and increasing power density

Inactive Publication Date: 2016-02-03
ZHANGJIAGANG GANGLIAN CLEAN ENERGY CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] However, the metallization design and process for micron-scale thermoelectric chips are no longer applicable, mainly in the following aspects: 1. In the micron-scale scale, the barrier effect of barrier materials used in conventional devices is reduced
2. The metallization process of millimeter-scale thermoelectric devices is extensive, which cannot meet the precision requirements of micron-scale thermoelectric chips, and will cause a lot of material waste
3. Lack of industrialized metallization design and process technology for different thermoelectric materials
[0008] For example, the method proposed by CN102412366A requires the use of vacuum sintering, which cannot be integrated with the semiconductor integration process of micron-scale thermoelectric chips, and may change the performance of pre-deposited thermoelectric materials
The process temperature proposed by US875098 is high, the electrode and barrier layer materials are easily oxidized, and the parameters are difficult to control
In addition, plasma spraying equipment is expensive, and the process is easy to cause waste of materials, and the cost is high
Although CN101409324A changes the process to arc spraying, it still cannot solve the problems of process responsibility and high cost

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  • Large scale integrated chip of high power thermoelectric conversion module and its manufacturing process
  • Large scale integrated chip of high power thermoelectric conversion module and its manufacturing process
  • Large scale integrated chip of high power thermoelectric conversion module and its manufacturing process

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Embodiment Construction

[0037] The specific implementation of the present invention will be described in further detail below in conjunction with the examples, so as to make the technical solution of the present invention easier to understand and grasp.

[0038] The invention proposes a thermoelectric material metallization design and process based on a large-scale semiconductor integration process.

[0039] First of all, from the perspective of the device structure of the large-scale integrated chip of the high-power thermoelectric conversion module, it has a slightly different basic structure in the cross-sectional direction for different temperature ranges of thermoelectric applications, in which there are thermoelectric arms in both low-temperature and high-temperature regions- Barrier-electrode base structure with thermoelectric arms-electrode base structure in the medium temperature region. In particular, the basic structures in the integrated chip of the present invention are all on the micron...

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Abstract

The invention discloses a large-scale integrated chip of a high power thermoelectric conversion module and a manufacturing process of the large-scale integrated chip of the high power thermoelectric conversion module. According to the large-scale integrated chip of the high power thermoelectric conversion module, a basic structure which is provided with a thermoelectric arm, a barrier layer and electrodes is arranged in both a low-temperature region and a high-temperature region, and a basic structure which is provided with a thermoelectric arm and electrodes is arranged in a middle-temperature region. The large-scale integrated chip of the high power thermoelectric conversion module is characterized in that the basic structures in the integrated chip is in micron size, the (Bi and Sb) 2Te3-base N type or P type thermoelectric arm is arranged in the basic structure in the low-temperature region, the PbTe-base N type or P type thermoelectric arm and the electrodes at least comprising Cu, In, Au and porous Ni are arranged in the basic structure in the middle-temperature region, the CoSb3-base N type or P type thermoelectric arm is arranged in the basic structure in the high-temperature region, and the barrier layers and the electrodes which are matched with the thermoelectric arms in performance are flexibly selected according to different thermoelectric arm materials. By the adoption of the semiconductor process which is relatively mature, micron-sized manufacture of thermoelectric chips can be achieved. According to the large-scale integrated chip of the high power thermoelectric conversion module and the manufacturing process of the large-scale integrated chip of the high power thermoelectric conversion module, power density of the thermoelectric chips is improved, production cost is reduced, and large-scale and mass production are fit.

Description

technical field [0001] The invention relates to a core thermoelectric device applied to a thermoelectric generator, in particular to a large-scale integrated chip of a high-power hot spot conversion module and a manufacturing process thereof. Background technique [0002] With the depletion of fossil energy and the increasingly severe change of the earth's climate, how to increase the utilization rate of renewable energy and reduce the emission of greenhouse gases has become a global energy issue and technical challenge. [0003] Thermoelectric power generation technology is a technology that uses the migration of microscopic particles (electrons or holes) in semiconductor thermoelectric materials to directly convert heat flow generated by temperature differences into electrical energy. The thermoelectric generator is only composed of a solid structure, does not contain gas and liquid circulating fluid, and has no moving parts, so it can be made into any size and shape, inst...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/16H01L35/32H01L35/24
Inventor 金安君
Owner ZHANGJIAGANG GANGLIAN CLEAN ENERGY CO LTD