Secondary-growth one-dimensional electron gas GaN-based HEMT (High Electron Mobility Transistor) device and preparation method

Abstract

The invention discloses a secondary-growth one-dimensional electron gas GaN-based HEMT (High Electron Mobility Transistor) device and a preparation method, which mainly solve the problems that the high temperature and high pressure characteristic, the frequency characteristic and the power characteristic of an existing one-dimensional electron gas device are poorer. The secondary-growth one-dimensional electron gas GaN-based HEMT device comprises a substrate, a buffer layer, a barrier layer, a passivation layer and a protection layer from bottom to top, wherein two ends of the barrier layer are respectively provided with a source electrode and a drain electrode, the passivation layer is positioned on the barrier layer between the source electrode and the drain electrode, the passivation layer is provided with a grid groove, the grid groove is internally provided with a grid electrode, the buffer layer adopts GaN, the barrier layer adopts AlGaN, the buffer layer is etched with a plurality of quantum wire grooves and quantum wire convex plates, the quantum wire grooves and the quantum wire convex plates are in periodical arrangement, the width of the quantum wire grooves and the quantum wire convex plates is in a nanometer level, and one-dimensional electron gas is formed in a heterogenous junction which is right under the quantum wire grooves and the quantum wire convex plates. Compared with a Si-based and GaAs-based one-dimensional electron gas device, the secondary-growth one-dimensional electron gas GaN-based HEMT device has the advantages of good high temperature and high pressure characteristic, good frequency characteristic and good power characteristic, and the one-dimensional electron gas device in super high speed and low power consumption can be manufactured.

Description

technical field

[0001] The invention belongs to the technical field of microelectronics and relates to a semiconductor device, in particular a one-dimensional electron gas HEMT device based on a GaN semiconductor material heterojunction structure, which can be used as a basic device of a microwave, millimeter wave communication system and a radar system. Background technique

[0002] III-V compound semiconductor materials are the third-generation semiconductor materials that have been developed rapidly for more than ten years, such as GaN-based, GaAs-based, InP-based and other semiconductor materials, which have a large band gap and can be combined with InN, AlN, etc. Alloy semiconductors are formed to make their forbidden band width adjustable. People usually use these III-V compound semiconductor materials to form various heterojunction structures. Due to the large difference in the forbidden band width of the III-V compound semiconductor materials on both sides of the het...

Examples

Embodiment 1

[0056] Embodiment 1, the production substrate 1 is sapphire, the buffer layer 2 is GaN, the barrier layer 5 is AlGaN, the passivation layer 9 is SiN, the protective layer 10 is SiN, the depth of the quantum wire groove 3 is 20nm, and the width is 10nm. The width of the quantum wire boss 4 is 10 nm, and the quantum wire groove 3 and the quantum wire boss 4 are periodically arranged one-dimensional electron gas GaN-based HEMTs.

[0057] Step 1, using metal organic chemical vapor deposition technology MOCVD to epitaxially GaN semiconductor material with a thickness of 1 μm on the sapphire substrate 1 as the buffer layer 2; the process conditions for the epitaxial GaN buffer layer 2 are: the temperature is 1020 ° C, and the pressure is 200 Torr , the hydrogen flow rate is 4600 sccm, the ammonia gas flow rate is 4600 sccm, and the gallium source flow rate is 200 μmol / min.

[0058] Step 2, coating electron photoresist on the buffer layer 2, using electron beam lithography to etch ou...

Embodiment 2

[0075] Embodiment 2, the production substrate 1 is silicon carbide, the buffer layer 2 is GaN, the barrier layer 5 is AlGaN, the passivation layer 9 is SiN, and the protective layer 10 is SiO 2 , the depth of the quantum wire groove 3 is 40nm, the width is 50nm, the width of the quantum wire boss 4 is 50nm, and the quantum wire groove 3 and the quantum wire boss 4 are one-dimensional electron gas GaN-based HEMTs arranged periodically.

[0076] Step 1, epitaxially epitaxially GaN buffer layer 2 with a thickness of 3 μm on silicon carbide substrate 1 .

[0077] Using metal organic chemical vapor deposition MOCVD equipment under the process conditions of temperature 1020 ° C, pressure 200 Torr, hydrogen flow rate 5000 sccm, ammonia gas flow rate 5000 sccm, gallium source flow rate 220 μmol / min, epitaxy on silicon carbide substrate 1 GaN buffer layer 2 with a thickness of 3 μm.

[0078] Step 2: Photoetch the required quantum wire pattern on the buffer layer 2, and etch a pluralit...

Embodiment 3

[0102] Embodiment 3, the production substrate 1 is silicon, the buffer layer 2 is GaN, the barrier layer 5 is AlGaN, and the passivation layer 9 is SiO 2 , the protective layer 10 is SiN, the depth of the quantum wire groove 3 is 70nm, the width is 100nm, the width of the quantum wire boss 4 is 100nm, and the quantum wire groove 3 and the quantum wire boss 4 are one-dimensional electron gas arranged periodically GaN-based HEMTs.

[0103] In step A, a GaN buffer layer 2 with a thickness of 5 μm is epitaxially formed on the silicon substrate 1 .

[0104] A GaN buffer layer 2 with a thickness of 5 μm was epitaxially grown on a silicon substrate 1 using metal-organic chemical vapor deposition MOCVD equipment; The gas flow rate is 5200 sccm, and the gallium source flow rate is 240 μmol / min.

[0105] In step B, the required quantum wire pattern is photoetched on the buffer layer 2, and several quantum wire grooves 3 spaced apart from each other are etched on the buffer layer 2 to ob...

technical field

[0001] The invention belongs to the technical field of microelectronics and relates to a semiconductor device, in particular a one-dimensional electron gas HEMT device based on a GaN semiconductor material heterojunction structure, which can be used as a basic device of a microwave, millimeter wave communication system and a radar system. Background technique

[0002] III-V compound semiconductor materials are the third-generation semiconductor materials that have been developed rapidly for more than ten years, such as GaN-based, GaAs-based, InP-based and other semiconductor materials, which have a large band gap and can be combined with InN, AlN, etc. Alloy semiconductors are formed to make their forbidden band width adjustable. People usually use these III-V compound semiconductor materials to form various heterojunction structures. Due to the large difference in the forbidden band width of the III-V compound semiconductor materials on both sides of the het...

Examples

Embodiment 1

[0056] Embodiment 1, the production substrate 1 is sapphire, the buffer layer 2 is GaN, the barrier layer 5 is AlGaN, the passivation layer 9 is SiN, the protective layer 10 is SiN, the depth of the quantum wire groove 3 is 20nm, and the width is 10nm. The width of the quantum wire boss 4 is 10 nm, and the quantum wire groove 3 and the quantum wire boss 4 are periodically arranged one-dimensional electron gas GaN-based HEMTs.

[0057] Step 1, using metal organic chemical vapor deposition technology MOCVD to epitaxially GaN semiconductor material with a thickness of 1 μm on the sapphire substrate 1 as the buffer layer 2; the process conditions for the epitaxial GaN buffer layer 2 are: the temperature is 1020 ° C, and the pressure is 200 Torr , the hydrogen flow rate is 4600 sccm, the ammonia gas flow rate is 4600 sccm, and the gallium source flow rate is 200 μmol / min.

[0058] Step 2, coating electron photoresist on the buffer layer 2, using electron beam lithography to etch ou...

Embodiment 2

[0075] Embodiment 2, the production substrate 1 is silicon carbide, the buffer layer 2 is GaN, the barrier layer 5 is AlGaN, the passivation layer 9 is SiN, and the protective layer 10 is SiO 2 , the depth of the quantum wire groove 3 is 40nm, the width is 50nm, the width of the quantum wire boss 4 is 50nm, and the quantum wire groove 3 and the quantum wire boss 4 are one-dimensional electron gas GaN-based HEMTs arranged periodically.

[0076] Step 1, epitaxially epitaxially GaN buffer layer 2 with a thickness of 3 μm on silicon carbide substrate 1 .

[0077] Using metal organic chemical vapor deposition MOCVD equipment under the process conditions of temperature 1020 ° C, pressure 200 Torr, hydrogen flow rate 5000 sccm, ammonia gas flow rate 5000 sccm, gallium source flow rate 220 μmol / min, epitaxy on silicon carbide substrate 1 GaN buffer layer 2 with a thickness of 3 μm.

[0078] Step 2: Photoetch the required quantum wire pattern on the buffer layer 2, and etch a pluralit...

Embodiment 3

[0102] Embodiment 3, the production substrate 1 is silicon, the buffer layer 2 is GaN, the barrier layer 5 is AlGaN, and the passivation layer 9 is SiO 2 , the protective layer 10 is SiN, the depth of the quantum wire groove 3 is 70nm, the width is 100nm, the width of the quantum wire boss 4 is 100nm, and the quantum wire groove 3 and the quantum wire boss 4 are one-dimensional electron gas arranged periodically GaN-based HEMTs.

[0103] In step A, a GaN buffer layer 2 with a thickness of 5 μm is epitaxially formed on the silicon substrate 1 .

[0104] A GaN buffer layer 2 with a thickness of 5 μm was epitaxially grown on a silicon substrate 1 using metal-organic chemical vapor deposition MOCVD equipment; The gas flow rate is 5200 sccm, and the gallium source flow rate is 240 μmol / min.

[0105] In step B, the required quantum wire pattern is photoetched on the buffer layer 2, and several quantum wire grooves 3 spaced apart from each other are etched on the buffer layer 2 to ob...

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