Unlock instant, AI-driven research and patent intelligence for your innovation.

Lithographic apparatus with dual reticle edge mask assembly and method of use

A technology of photolithography and masking, which is applied in the direction of photolithography exposure device, printing device, microlithography exposure equipment, etc., and can solve the problems of increasing production time and cost

Active Publication Date: 2016-03-30
TAIWAN SEMICON MFG CO LTD
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Replacing masks or using multiple lithography arrangements increases production time and cost

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Lithographic apparatus with dual reticle edge mask assembly and method of use
  • Lithographic apparatus with dual reticle edge mask assembly and method of use
  • Lithographic apparatus with dual reticle edge mask assembly and method of use

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0044] The following disclosure provides many different embodiments or examples for implementing different features of the invention. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are merely examples and are not intended to be limiting.

[0045] Figure 1A is a schematic diagram of a lithographic apparatus 100 having a dual reticle edge mask assembly (REMA) 102a and 102b. The lithographic apparatus 100 includes a light source 104 that emits a light beam 105 . The beam splitting element 106 receives the beam 105 from the light source 104 and splits the beam 105 into two collimated beams 107a and 107b. Two collimated beams 107a and 107b are incident on corresponding REMAs 102a and 102b, respectively. Light 109a and 109b passing through REMAs 102a and 102b contact masks 108a and 108b, respectively. Masks 108a and 108b include patterns that block a portion of incident light 109a and 109b. Light 111a a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention discloses a lithographic apparatus comprising at least two reticle edge mask assemblies (REMAs). The lithographic apparatus further includes a light source configured to emit a light beam having a wavelength, and a beam splitting element configured to split the light beam into a plurality of collimated light beams. Each REMA is arranged to receive one of the plurality of collimated beams, and each REMA has a movable slit for passing one of the collimated beams. The lithographic apparatus further includes at least one mask having a pattern, wherein the at least one mask is configured to receive light from the at least one REMA; and a projection lens configured to receive light from the at least one mask. The present invention also discusses a method of using the lithographic apparatus. Furthermore, the present invention also discloses a photolithography device with a double reticle edge masking assembly and a method for using the same.

Description

technical field [0001] The invention relates to the technical field of semiconductors, and more particularly, to a photolithography device with a double reticle edge masking assembly and a method for using the same. Background technique [0002] As technology nodes shrink, the density of components on a substrate increases. The reduced pitch between features on the substrate may result in the layout design being broken into multiple patterns due to resolution limitations. Traditional lithography arrangements, including single reticle edge masking assemblies, can only transfer one pattern at a time. [0003] The reticle edge masking assembly includes a slot extending across substantially the entire width of the reticle masking element. The slot is translatable along a length direction perpendicular to the width of the reticle masking element. As a result of the redirection of the slits, portions of the mask are illuminated, the pattern of which can be transferred to the wa...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20H01L21/027
CPCG03F7/70066G03F7/70283G03B27/50G03F7/20H01L21/0274G03F7/70341G03F7/70641G03F7/70725
Inventor 吴东立林进祥刘恒信彭瑞君
Owner TAIWAN SEMICON MFG CO LTD