Array substrate, manufacturing method thereof, and display device

Abstract

The embodiment of the invention discloses an array substrate, a manufacturing method thereof, and a display device, which relate to the display field and can make the lengths of two low-doped regions of the LTPS-TFT consistent, thereby ensuring the ability of the LTPS-TFT to suppress leakage current. The manufacturing method of the array substrate includes: using a mask to form a gate metal layer on the array substrate; using the mask to control the exposure energy so that the exposed feature size is larger than the gate metal layer to form low-doped regions with the same length on both sides of the gate metal layer.

Description

technical field [0001] The present invention relates to the field of display, and in particular, to an array substrate, a manufacturing method thereof, and a display device. Background technique [0002] Low temperature polysilicon (LowTemperaturePoly-silicon, referred to as LTPS) thin film transistor liquid crystal display (ThinFilmTransistor-LiquidCrystalDisplay, referred to as TFT-LCD) is in the packaging process, using excimer laser as a heat source, projected on the glass substrate of amorphous silicon structure, when non-crystalline After the crystalline silicon structure glass substrate absorbs the energy of the excimer laser, it will be transformed into a polysilicon structure. Since the entire processing process is completed below 600 °C, it is suitable for general glass substrates. [0003] LTPS-TFTLCD has been widely used because of its high resolution, fast response, high brightness, high aperture ratio, etc. However, the TFT on the array substrate in the prior a...

AI Technical Summary

Problems solved by technology

[0003] LTPS-TFTLD is widely used because of its advantages of high resolution, fast response, high brightness, and high aperture ratio. However, the TFTs on the array substrate in the prior art need to pass through two mask plates to form gates. pole and low-doped region, after the lithography equipment completes the gate, it needs to replace the mask to make the low-doped region. There may be an alignment error between the two masks, which should cause the gate to be symmetrically located. The lengths of the two low-doped regions on both sides are inconsistent, and the inconsistent low-doped regions reduce the ability of TFT to suppress leakage current, resulting in excessive leakage current and increasing the power consumption of LTPS-TFTLD

Images