Array substrate, method for manufacturing same and display device
A technology of an array substrate and a manufacturing method, applied in the display field, can solve the problems of large leakage current, inconsistent length, and reducing the ability of TFT to suppress leakage current, so as to reduce leakage current, ensure the ability to suppress leakage current, and reduce power consumption Effect
Active Publication Date: 2013-11-27
BEIJING BOE OPTOELECTRONCIS TECH CO LTD
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Problems solved by technology
[0003] LTPS-TFT LCD is widely used because of its advantages of high resolution, fast response, high brightness, and high aperture ratio. However, the TFTs on the array substrate in the prior art need to pass through two masks to form Gate and low-doped region. After the lithography equipment completes the gate, it needs to replace the mask to make the low-doped region. There may be an alignment error between the two masks, which should cause the grid to be symmetrically located. The lengths of the two low-doped regions on both sides of the pole are inconsistent, and the inconsistent low-doped regions reduce the ability of TFT to suppress leakage current, resulting in excessive leakage current and increasing the power consumption of LTPS-TFT LCD
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[0040] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0041] An embodiment of the present invention provides a method for manufacturing an array substrate, such as figure 1 As shown, the method includes:
[0042] Step S101 , using a mask to form a gate metal layer on the array substrate.
[0043] Step S102 , using the mask to control the exposure energy so that the exposed feature size is larger than the size of the gate metal layer, so as to form low-doped regions with the same length on both sides...
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The embodiment of the invention discloses an array substrate and a method for manufacturing the array substrate and a display device, and relates to the field of display. By means of the array substrate, the method and the display device, the lengths of two lightly doped zones of an LTPS-TFT can be made to be equal, and the capacity for restraining leakage currents of the LEPS-TFT is guaranteed. The method for manufacturing the array substrate comprises the steps that a grid metal layer is formed on the array substrate by the utilization of a mask plate; the mask plate is used for controlling exposure energy to enable the feature size of exposure to be larger than the size of the grid metal layer, so that the light doped zones which are located on the two sides of the grid metal layer and are equal in length are formed.
Description
technical field [0001] The present invention relates to the display field, in particular to an array substrate, a manufacturing method thereof, and a display device. Background technique [0002] Low Temperature Poly-silicon (LTPS for short) thin film transistor liquid crystal display (Thin Film Transistor-Liquid Crystal Display, TFT-LCD for short) is in the encapsulation process, using excimer laser as heat source, projected on the amorphous silicon structure On the glass substrate, when the amorphous silicon structure glass substrate absorbs the energy of the excimer laser, it will transform into a polysilicon structure. Since the entire processing process is completed below 600°C, general glass substrates are applicable. [0003] LTPS-TFT LCD is widely used because of its advantages of high resolution, fast response, high brightness, and high aperture ratio. However, the TFTs on the array substrate in the prior art need to pass through two masks to form Gate and low-dope...
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IPC IPC(8): H01L21/77H01L27/12H01L29/786
CPCH01L29/66757H01L29/78621G02F1/1368H01L27/1222H01L27/1285H01L27/1288H01L29/78675
Inventor 沈奇雨
Owner BEIJING BOE OPTOELECTRONCIS TECH CO LTD