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Wafer-level optoelectronic device packaging and manufacturing method thereof

A wafer and photodetector technology, applied in semiconductor/solid-state device manufacturing, electrical solid-state devices, electrical components, etc., to solve problems such as increasing bills of materials, increasing cycle time, and rising manufacturing costs

Active Publication Date: 2017-06-09
INTERSIL INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] As can be understood from the exemplary prior art optical proximity sensor 102 described with reference to FIG. cycle time and lead to high yield loss

Method used

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  • Wafer-level optoelectronic device packaging and manufacturing method thereof
  • Wafer-level optoelectronic device packaging and manufacturing method thereof
  • Wafer-level optoelectronic device packaging and manufacturing method thereof

Examples

Experimental program
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Embodiment Construction

[0022] image 3 , including the section image 3 (a)-3(i), are used to illustrate the fabrication of an optoelectronic device (and more particularly, a plurality of such devices) according to certain embodiments of the present invention. For example, refer to image 3 The process described can be used to produce the previously referenced figure 2 An optoelectronic device 202 is depicted.

[0023] refer to image 3 (a), a plurality of photodetector sensor areas 306 are shown formed in a silicon wafer 304 . A through-silicon via (TSV) process is performed to form holes 308 that will provide between components connected to the top of the wafer 304 and electrical contacts (such as solder balls) that will be formed on the bottom of the wafer after the wafer is background electrical connection. For example, a standard TSV process with plasma etching may be used to form partial depth openings (drilled holes) into wafer 304 . The partial depth TSV process can be performed at th...

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PUM

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Abstract

Describe the optoelectronic devices (for example, optical approximation sensor), methods for manufacturing optoelectronic devices, and systems including optoelectronic devices.Including the optoelectronic device of the optical detector core of the light detector sensor area.The light source tube core is attached to the part of the sensor area of the optical detector tube.A opaque partitions are formed between the light detection sensor area and the light source tube core, and the light transmittance of the light -transmitting material wraps the light source area and the light source tube core.The light source tube core is connected to the optical detector tube, instead of connecting the separate base plate (such as the PCB substrate) of the light source core and the optical detector tube core, so that the optical detector tube core is used as the base of the optoelectronics device that is completed.This provides a reduction in cost and reduces the total packaging coverage area.

Description

technical field [0001] The present application relates to wafer-level optoelectronic device packages, such as packages for optical proximity sensors, methods of manufacturing optoelectronic device packages, and systems including optoelectronic device packages. Background technique [0002] FIG. 1 is a perspective view of an exemplary prior art optical proximity sensor 102 including a cover 122 shown removed. The sensor 102 includes a light source die 104 and a light detector die 106 separated from each other and attached to a base substrate 108 (eg, a printed circuit board (PCB)). Light source die 104 is encased in clear epoxy 114 , while light detector die 116 is encased separately in clear epoxy 116 . There is a gap 112 between the clear epoxy 116 surrounding the photodetector die 106 and the clear epoxy 118 surrounding the light source die 104, where the gap 112 accepts the crosstalk barrier when the cover 122 is attached to the substrate 108. Plate 132 (which is part o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01D5/30H01L21/60H01L21/56G01S17/04
CPCH01L27/1446H01L24/97H01L2224/48091H01L2224/48227H01L2924/12041H01L2924/12042H01L2924/12044H01L2924/12036G01S7/4813H01L31/0203H01L31/173G01S17/04H01L2924/00014H01L2924/00H01L25/165H01L25/167H01L31/02002H01L31/16H01L31/18
Inventor S·G·A·萨鲁马林盖姆S·J·翁
Owner INTERSIL INC