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Groove gate power MOS device

A MOS device and power technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of single event burnout, device failure, entry, etc., to improve the ability to resist the single event burnout effect, and reduce the single event burnout effect. Effect

Inactive Publication Date: 2014-01-15
HARBIN ENG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the lateral voltage drop reaches 0.7V, the parasitic bipolar transistor inside the power MOS device is turned on and positively biased. At this time, a large number of electrons will enter the P channel region from the source region. If the drain voltage reaches the parasitic bipolar transistor breakdown voltage, the collector of the parasitic bipolar transistor will have an avalanche multiplication effect, the current will increase sharply, and the single event burnout effect will occur, resulting in device failure

Method used

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Embodiment Construction

[0023] Embodiments of the present invention will be specifically described below in conjunction with the accompanying drawings.

[0024] Such as figure 1 As shown, the MOS device in the prior art includes: a substrate (such as, N + substrate), drift zone (eg, N - drift), N + P - junction, and source metal. Such as figure 2 As shown, an embodiment of the present invention provides a MOS device, including: a substrate (eg, N + substrate), drift zone (eg, N + substrate), P body region, and source metal, wherein, the Schottky contact is directly formed between the P body region and the source metal. It can be seen that the MOS device described in the embodiment of the present invention does not contain N + P - The junction is replaced by the Schottky formed directly between the P body region and the source metal. The generation of the Schottky reduces the injection efficiency of electrons, thereby reducing the possibility of single-electron burnout.

[0025] Preferably,...

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Abstract

The invention provides a groove gate power MOS device which comprises a P body zone and source electrode metal. The source electrode metal and the P body zone are in direct contact to form schottky. Through the structure, the effect of a parasite bipolar transistor in the device is lowered. Under the premise that the basic electrical properties of the device are equal to those of an MOS device in the prior art, the structure can effectively lower generation of the single-particle burning effect.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a trench gate power MOS device resistant to single event burning. Background technique [0002] With the rapid development of power electronics technology, power Metal-Oxide-Semiconductor (MOS) devices have become one of the irreplaceable important devices in the field of microelectronics, and are applied to many electronic designs and applications. . In the space radiation environment, after the incident particles are incident on the P-type doping, the PP + A large number of electron-hole pairs are generated in the region. Under the dual effects of drift electric field and carrier diffusion, the holes in these electron-hole pairs move to the source, and the electrons in these electron-hole pairs move to the drain, forming instantaneous current, thus the PP + region produces a lateral voltage drop. When the lateral voltage drop reaches 0.7V, the parasitic bipolar transistor insi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/417H01L29/47
CPCH01L29/7827H01L29/47
Inventor 王颖张越曹菲胡海帆
Owner HARBIN ENG UNIV