Unlock instant, AI-driven research and patent intelligence for your innovation.

Laser processing method for wafer

A laser processing method and wafer technology, applied in laser welding equipment, stone processing equipment, metal processing equipment, etc., can solve the problem of high fragmentation rate, achieve the effect of not easy to break, reduce the fragmentation rate, and ensure the operability strength

Active Publication Date: 2014-01-29
HANS LASER TECH IND GRP CO LTD
View PDF5 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the embodiment of the present invention is to provide a wafer laser processing method, aiming to solve the problem of high fragmentation rate in subsequent processing due to the edge of the wafer being cut in the traditional wafer processing technology

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Laser processing method for wafer
  • Laser processing method for wafer
  • Laser processing method for wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0022] see figure 2 and image 3 , the wafer laser processing method provided by the embodiment of the present invention includes the following steps:

[0023] a) providing a wafer 20, the wafer 20 has a front side 21 and a back side 22 with electrodes (not shown in the figure), the back side 22 of the wafer 20 is provided with a dicing line 23;

[0024] b) pasting a film on the back 22 of the wafer 20;

[0025] c) Locate the film-coated wafer 20 in a laser cutting device (not shown in the figure), and the laser light emitted by the laser cutting device travels along the wafer 20 at a predeterm...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a laser processing method for a wafer. The laser processing method includes steps of a), providing the wafer; b), adhering a film on the wafer; c), performing inward laser cutting along a cutting path of the wafer; d), removing the film; e), performing evaporation on the wafer without the film; f), adhering another film on the wafer; g), fragmenting the wafer; h), reversely adhering a third film on the wafer; i), expanding the film; j), testing the wafer. The cutting path is separated from the outer edge of the wafer by a preset distance. The laser processing method has the advantages that a position, which is separated from the outer edge of the wafer by the preset distance, is cut during laser cutting, so that portions, which are positioned among the outer edge of the wafer and the position separated from the outer edge of the wafer by the certain distance are prevented from being cut, the operational strength of the wafer is integrally guaranteed, the wafer is not easy to crack, the processing yield can be greatly increased, and the cracking rate can be reduced.

Description

technical field [0001] The invention relates to a wafer laser processing method. Background technique [0002] With the continuous increase of market demand, the LED manufacturing industry has higher and higher requirements for production capacity, yield and luminous brightness. Laser processing technology has become the primary tool in the LED manufacturing industry and the industry standard for high-brightness LED wafer processing. [0003] Laser scribing greatly reduces wafer microcracks and microcrack expansion, and greatly reduces the distance between LED monomers, which not only increases production capacity, but also increases production efficiency. The laser scribing mentioned here refers to laser cutting wafers. [0004] see figure 1 , in the traditional wafer processing technology, the wafer 10 to be cut is positioned on a laser cutting device, and the laser cutting device controls the laser to cut the wafer 10 along the cutting line 11 from the edge of the wafe...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/78B23K26/38B28D5/00
CPCB23K26/38B23K26/40B23K2103/50H01L21/78H01L33/005
Inventor 高昆叶树铃邴虹陈红李瑜庄昌辉张红江刘立文欧明辉迟彦龙马国东高云峰
Owner HANS LASER TECH IND GRP CO LTD