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Method for processing wafer through laser

A laser processing method and wafer technology, applied in laser welding equipment, metal processing equipment, manufacturing tools, etc., can solve problems such as wafer edge cracking

Active Publication Date: 2014-01-29
HANS LASER TECH IND GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the embodiments of the present invention is to provide a laser processing method for wafers, aiming to solve the problem that the edge of the wafer is broken due to the tearing force in the traditional wafer processing technology after scribing

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  • Method for processing wafer through laser
  • Method for processing wafer through laser
  • Method for processing wafer through laser

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Embodiment Construction

[0020] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0021] see Figure 1 to Figure 4 , the wafer laser processing method provided by the embodiment of the present invention includes the following steps:

[0022] Provide a wafer 10, the wafer 10 has a front 11 and a back 12 with electrodes (not shown), the front 11 of the wafer 10 is provided with a dicing line (not shown);

[0023] The wafer 10 is placed on a film mounter (not shown in the figure) to carry out the film backing of the wafer, and the white film 20 provided by the film mounter is pasted on the back side 12 of the wafer 10;

[0024] Paste a first ring-shaped element 30 on the white fi...

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Abstract

The invention provides a method for processing a wafer through a laser. The method comprises the following steps that the wafer is provided; the wafer is placed on a film sticking machine and a film is pasted to the back face of the wafer; a first annular component is pasted to a white film; the wafer, the first annular component and the white film are placed inversely; a second annular component is pasted to the white film, and the inner edge of the second annular component covers the outer edge of the front face of the wafer; the wafer pasted with the film and the second annular component are positioned in a laser cutting device, and the laser cuts along cutting track, exposed out of the second annular component, of the wafer in a invisible mode; the second annular component and the white film are dismounted; the front face of the wafer is plated with metal. According to the method for processing the wafer through the laser, the outer edge of the wafer is covered by the second annular component and is not cut, the strength of the edge of the cut wafer is guaranteed in the follow-up process, the integrity and manipulation strength of the wafer are wholly guaranteed, the wafer is not fractured easily, the yield of processing is greatly improved, and the fragment rate is reduced.

Description

technical field [0001] The invention relates to a wafer laser processing method. Background technique [0002] With the continuous increase of market demand, the LED manufacturing industry has higher and higher requirements for production capacity, yield and luminous brightness. Laser processing technology has become the primary tool in the LED manufacturing industry and the industry standard for high-brightness LED wafer processing. [0003] Laser scribing greatly reduces wafer microcracks and microcrack expansion, and greatly reduces the distance between LED monomers, which not only increases production capacity, but also increases production efficiency. The laser scribing mentioned here refers to laser cutting wafers. [0004] At present, the production process of wafers has begun to turn to coating a metal reflective layer on the back of the wafers, which can greatly enhance the luminous efficiency and luminous intensity of LED monomers. But what follows is that new p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B23K26/38B23K26/70
CPCB23K26/38B23K26/40B23K26/60B23K2103/50
Inventor 丛晓晗尹建刚唐建刚蒋晓华曾威李海涛杨名宇高云峰
Owner HANS LASER TECH IND GRP CO LTD