Wafer laser processing method
A laser processing method and wafer technology, applied in laser welding equipment, metal processing equipment, manufacturing tools, etc., can solve problems such as wafer edge cracking
Active Publication Date: 2016-05-25
HANS LASER TECH IND GRP CO LTD
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Problems solved by technology
[0005] The purpose of the embodiments of the present invention is to provide a laser processing method for wafers, aiming to solve the problem that the edge of the wafer is broken due to the tearing force in the traditional wafer processing technology after scribing
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[0018] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.
[0019] see Figure 1 to Figure 3 , the wafer laser processing method provided by the embodiment of the present invention includes the following steps:
[0020] Provide a wafer 10, the wafer 10 has a front 11 and a back 12 with electrodes (not shown), the back 12 of the wafer 10 is provided with a dicing line (not shown);
[0021] The wafer 10 is placed on a film mounter (not shown in the figure) to carry out film bonding on the back of the wafer 10, and the film to be pasted is a white film 30;
[0022] An annular element 20 is set on the periphery of the wafer 10 on the film mounter, the inner e...
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Abstract
The invention provides a laser processing method for a wafer. The laser processing method includes steps of providing the wafer; placing the wafer on a film adhering machine and adhering a film on the back surface of the wafer; covering an annular element on the periphery of the wafer on the film adhering machine, enabling the inner edge of the annular element to cover the outer edge of the wafer and adhering a film on the bottom surface of the annular element; positioning the wafer adhered with the film and the annular element adhered with the film in laser cutting equipment and performing laser cutting on a cutting path, which is exposed out along the wafer, of the outside of the annular element by the aid of laser; detaching the annular element; removing the film adhered on the back surface of the wafer; plating metal on the back surface of the wafer. The laser processing method for the wafer has the advantages that the annular element covers the outer edge of the wafer, so that the outer edge of the wafer is prevented from being cut, the strength of the edge of the cut wafer can be guaranteed during follow-up processing, the integrity and the operational strength of the wafer can be integrally guaranteed, the wafer is not easy to crack, the processing yield can be greatly increased, and the cracking rate can be reduced.
Description
technical field [0001] The invention relates to a wafer laser processing method. Background technique [0002] With the continuous increase of market demand, the LED manufacturing industry has higher and higher requirements for production capacity, yield and luminous brightness. Laser processing technology has become the primary tool in the LED manufacturing industry and the industry standard for high-brightness LED wafer processing. [0003] Laser scribing greatly reduces wafer microcracks and microcrack expansion, and greatly reduces the distance between LED monomers, which not only increases production capacity, but also increases production efficiency. The laser scribing mentioned here refers to laser cutting wafers. [0004] At present, the production process of wafers has begun to turn to back-plating metal on wafers to achieve the purpose of improving brightness. However, after the back metallization, the scribing process cannot form scratches on the wafer, so the ...
Claims
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IPC IPC(8): H01L21/78B23K26/38
CPCB23K26/38B23K26/40B23K2103/50H01L21/78H01L33/005
Inventor 高昆叶树铃庄昌辉邴虹李瑜马国东刘立文杨振华高云峰
Owner HANS LASER TECH IND GRP CO LTD