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A kind of doping method of MOS device

A MOS device, non-doping technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of difficulty in reducing threshold voltage, deterioration of subthreshold characteristics, and reduction of carrier mobility, etc., to achieve Precise control of the effect of doping concentration

Active Publication Date: 2016-09-28
LIYANG TECH DEV CENT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the continuous increase of doping concentration will lead to problems such as the decrease of carrier mobility, the deterioration of subthreshold characteristics, and the difficulty in reducing the threshold voltage.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] When the doped region of the MOS device proposed by the present invention is doped, the following steps are sequentially included:

[0015] Step 1, put the silicon wafer into the diffusion furnace for the first thermal diffusion;

[0016] Step 2, introducing oxygen into the above-mentioned diffusion furnace to form a thin oxide layer on the surface of the silicon wafer;

[0017] Step 3, coating the mixed solution on the surface of the thin oxide layer of the silicon wafer, and then performing the second thermal diffusion doping.

[0018] Wherein, in step 1, a photoresist is used to define an undoped region on the silicon wafer, thereby exposing the surface of the undoped region, and then a silicon nitride layer is formed on the surface of the undoped region. The main function of the silicon layer is as an impurity blocking layer, so its thickness should be thick enough to prevent impurities from entering the non-doped region. In the present invention, the thickness of ...

Embodiment 2

[0022] When the doped region of the MOS device proposed by the present invention is doped, the following steps are sequentially included:

[0023] Step 1, put the silicon wafer into the diffusion furnace for the first thermal diffusion;

[0024] Step 2, introducing oxygen into the above-mentioned diffusion furnace to form a thin oxide layer on the surface of the silicon wafer;

[0025] Step 3, coating the mixed solution on the surface of the thin oxide layer of the silicon wafer, and then performing the second thermal diffusion doping.

[0026] Wherein, in step 1, a photoresist is used to define an undoped region on the silicon wafer, thereby exposing the surface of the undoped region, and then a silicon nitride layer is formed on the surface of the undoped region. The main function of the silicon layer is as an impurity blocking layer, so its thickness should be thick enough to prevent impurities from entering the non-doped region. In the present invention, the thickness of ...

Embodiment 3

[0030] When the doped region of the MOS device proposed by the present invention is doped, the following steps are sequentially included:

[0031] Step 1, put the silicon wafer into the diffusion furnace for the first thermal diffusion;

[0032] Step 2, introducing oxygen into the above-mentioned diffusion furnace to form a thin oxide layer on the surface of the silicon wafer;

[0033] Step 3, coating the mixed solution on the surface of the thin oxide layer of the silicon wafer, and then performing the second thermal diffusion doping.

[0034] Wherein, in step 1, a photoresist is used to define an undoped region on the silicon wafer, thereby exposing the surface of the undoped region, and then a silicon nitride layer is formed on the surface of the undoped region. The main function of the silicon layer is as an impurity blocking layer, so its thickness should be thick enough to prevent impurities from entering the non-doped region. In the present invention, the thickness of ...

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Abstract

The invention discloses a doping method of an MOS device. The method comprises the following steps: step one, a silicon wafer is placed in a diffusion furnace for first heat diffusion; step two, oxygen is injected into the diffusion furnace, so as to form a thin oxide layer on the surface of the silicon wafer; and step three, the surface of the thin oxide layer of the silicon wafer is coated by mixed liquor, and then second heat diffusion doping is carried out.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a doping method for MOS devices. Background technique [0002] The impurity doping process of existing MOS devices is a key technology that determines the level and uniformity of device parameters. The doping methods for MOS devices mainly include: boron or phosphorus plasma implantation method and the method of using latex source or gaseous source to diffuse at high temperature. For the ion implantation method, the doping speed is fast and the precision control is excellent, but the ion implantation will cause lattice defects, thereby affecting the performance of the MOS device. For doping impurities directly with latex source or gaseous source at high temperature, when high boron sheet resistance is required, the accuracy is poor due to the high concentration of impurity sources. In this way, the consistency of semiconductor device parameters produced is very poor: suc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/22H01L21/336
CPCH01L21/223H01L21/225H01L29/66477
Inventor 丛国芳
Owner LIYANG TECH DEV CENT
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