Preparation method of InP nanorod radial homojunction array structure and solar cell

An array structure and nano-column technology, applied in nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve the problem that the efficiency of nanocolumn solar cells is not very high, to increase efficiency, reduce reflection, equipment simple effect

Pending Publication Date: 2022-03-25
TSINGHUA UNIV
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Problems solved by technology

However, in general, the preparation of radial junctions of nanopillars requires precise control of the doping concentration in a very small size (within 200nm), and it is easy to introduce additional surface defects. The efficiency of nanopillar solar cells is not very high.

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  • Preparation method of InP nanorod radial homojunction array structure and solar cell
  • Preparation method of InP nanorod radial homojunction array structure and solar cell
  • Preparation method of InP nanorod radial homojunction array structure and solar cell

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Embodiment Construction

[0033] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary and are intended to explain the present invention and should not be construed as limiting the present invention.

[0034] The method for preparing the radial homojunction of indium phosphide nanocolumns according to the embodiments of the present invention will be described below with reference to the accompanying drawings.

[0035] like figure 1 As shown, the preparation method of the radial homojunction array structure of the indium phosphide nanocolumn comprises the following steps:

[0036] (1) Clean and dry the p-type InP single wafer;

[0037] (2) Fabricate a nanocolumn array on the surface of a p-type InP single wafer and clean it wi...

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Abstract

The invention discloses a preparation method of an indium phosphide nanorod radial homojunction array structure. The preparation method comprises the following steps: cleaning and blow-drying a p-type InP single crystal wafer; manufacturing a nanorod array on the surface of the p-type InP single crystal wafer, and cleaning the nanorod array with acid; and the side surface of the nanorod array is coated with an oxide layer and is plated with a transparent conductive layer. According to the method, in the preparation process, preparation of the indium phosphide nanorod array and the radial homojunction is achieved at the same time, the surface doping concentration and depth of indium phosphide are accurately controlled by controlling the etching time and the H2 content, and compared with other methods for growing the radial homojunction, the method is simple in equipment and high in preparation efficiency. The invention also provides a solar cell. The solar cell provided by the invention has relatively high sunlight absorptivity and conversion efficiency.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a preparation method of an InP nano-column radial homojunction array structure and a solar cell. Background technique [0002] With the development of the global economy and the growth of the population, the pollution caused by fossil fuels has become increasingly serious, and people have begun to explore alternatives to traditional energy sources. Solar energy is the most abundant and easily accessible renewable energy on the earth. A solar cell is a semiconductor device that directly uses solar energy to generate electricity through the photoelectric conversion effect. However, the low energy conversion efficiency and high cost of solar cells have become two major problems restricting its development. At present, silicon-based solar cells occupy a dominant position in solar cells, and the conversion efficiency of monocrystalline silicon cells can reach about...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0693B82Y30/00B82Y40/00
CPCH01L31/184H01L31/0693B82Y30/00B82Y40/00Y02E10/544Y02P70/50
Inventor 甘霖李永卓孙皓宁存政
Owner TSINGHUA UNIV
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