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dmos device manufacturing method and dmos device

A manufacturing method and device technology, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as semiconductor devices not working properly, and achieve the effects of precise control of doping concentration and equivalent resistance.

Active Publication Date: 2020-06-23
FOUNDER MICROELECTRONICS INT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, as the size of DMOS devices continues to shrink, the area of ​​DMOS devices becomes smaller and smaller, and the switching frequency becomes higher and higher. When the switching frequency reaches a certain threshold, it may cause EMI (Electromagnetic Interference) to the input signal of the DMOS device. , electromagnetic interference) problems, which may cause semiconductor devices not to work properly

Method used

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  • dmos device manufacturing method and dmos device
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  • dmos device manufacturing method and dmos device

Examples

Experimental program
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Effect test

Embodiment 1

[0022] This embodiment provides a method for fabricating a DMOS device, which is used for fabricating a DMOS device. Such as figure 1 Shown is a schematic flow chart of the method for fabricating a DMOS device according to this embodiment. The fabrication method of the DMOS device of the present embodiment comprises:

[0023] Step 101, forming a polysilicon layer on a substrate.

[0024] The base of this embodiment may include a substrate, an epitaxial layer, and a gate oxide layer formed sequentially from bottom to top. The method of forming the polysilicon layer may be: forming a polysilicon material layer on the gate oxide layer, and then performing an ion implantation doping process to form the polysilicon layer.

[0025] Step 102, forming a shielding material layer on the polysilicon layer.

[0026] The layer of shielding material may be a silicon dioxide layer. There are many ways to form the shielding material layer. For example, a polysilicon layer is formed by de...

Embodiment 2

[0033] In this embodiment, a further supplementary explanation is given to the method for fabricating the DMOS device in the first embodiment. Such as Figures 2A to 2I Shown is a structural schematic diagram of each step of the DMOS device manufacturing method according to this embodiment. In this embodiment, the method for fabricating an N-type DMOS device is taken as an example for illustration.

[0034] Such as Figure 2A As shown, a gate oxide layer 2014 is formed on an initial substrate 201 , a substrate 200 is formed from a bottom-up substrate 2011 , an epitaxial layer 2012 and a gate oxide layer 2014 , and then a polysilicon material layer 204 is formed on the substrate 200 .

[0035] The specific method of forming the gate oxide layer 2014 may be thermal oxidation of the epitaxial layer 2012 , and the method of forming the polysilicon material layer 204 may be a deposition method, specifically forming the polysilicon material layer 204 on the gate oxide layer 2014 ....

Embodiment 3

[0056] This embodiment provides a DMOS device. Such as Figure 2E As shown, the DMOS device of this embodiment includes a substrate 200 , a polysilicon gate 207 , a shielding layer 208 and a body region 210 .

[0057] Wherein, the polysilicon gate 207 is formed on the substrate 200 ; the shielding layer 208 is formed above the polysilicon gate 207 ; the body region 210 is formed in the substrate 200 , and the body region 210 is located on both sides of the polysilicon gate 207 . Wherein, the base includes a substrate 2011 , an epitaxial layer 2012 and a gate oxide layer 2014 which are sequentially formed from bottom to top.

[0058] It should be noted that although ions are implanted into the base 210 on both sides of the polysilicon gate 207 , due to ion diffusion in the body region 210 , both ends of the body region 210 will extend into the bottom of the polysilicon gate 207 .

[0059] The material of the shielding layer 208 in this embodiment is silicon dioxide, and the t...

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Abstract

The invention provides a method for manufacturing a DMOS device and a DMOS device. The method includes: forming a polysilicon layer on a substrate; forming a shielding material layer on the polysilicon layer; etching the polysilicon layer and the shielding material layer to form A polysilicon gate and a shielding layer, the shielding layer is located above the polysilicon gate; using the shielding layer as a mask, the first ion implantation is performed on the base to form a body region. According to the present invention, precise control of the doping concentration of the polysilicon gate can be realized.

Description

technical field [0001] The invention relates to semiconductor technology, in particular to a method for manufacturing a DMOS device and a DMOS device. Background technique [0002] DMOS (Double-diffused Metal Oxide Semiconductor, double-diffused metal oxide semiconductor) device is a main type of power MOSFET, its switching performance is very important in the application, the switching performance mainly depends on the polysilicon gate in the DMOS device, etc. effective resistance. Theoretically, the smaller the equivalent resistance, the higher the switching frequency. [0003] However, as the size of DMOS devices continues to shrink, the area of ​​DMOS devices becomes smaller and smaller, and the switching frequency becomes higher and higher. When the switching frequency reaches a certain threshold, it may cause EMI (Electromagnetic Interference) to the input signal of the DMOS device. , electromagnetic interference) problems, which may cause semiconductor devices to no...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L21/336
CPCH01L29/66674H01L29/7801H01L29/7802H01L29/66712
Inventor 姜春亮蔡远飞
Owner FOUNDER MICROELECTRONICS INT
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