Doping method of MOS device
A technology of MOS devices and silicon wafers, applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as difficulty in reducing threshold voltage, reduction in carrier mobility, and deterioration in sub-threshold characteristics, and achieve accurate Effect of Controlling Doping Concentration
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Embodiment 1
[0014] When the doped region of the MOS device proposed by the present invention is doped, the following steps are sequentially included:
[0015] Step 1, put the silicon wafer into the diffusion furnace for the first thermal diffusion;
[0016] Step 2, introducing oxygen into the above-mentioned diffusion furnace to form a thin oxide layer on the surface of the silicon wafer;
[0017] Step 3, coating the mixed solution on the surface of the thin oxide layer of the silicon wafer, and then performing the second thermal diffusion doping.
[0018] Wherein, in step 1, a photoresist is used to define an undoped region on the silicon wafer, thereby exposing the surface of the undoped region, and then a silicon nitride layer is formed on the surface of the undoped region. The main function of the silicon layer is as an impurity blocking layer, so its thickness should be thick enough to prevent impurities from entering the non-doped region. In the present invention, the thickness of ...
Embodiment 2
[0022] When the doped region of the MOS device proposed by the present invention is doped, the following steps are sequentially included:
[0023] Step 1, put the silicon wafer into the diffusion furnace for the first thermal diffusion;
[0024] Step 2, introducing oxygen into the above-mentioned diffusion furnace to form a thin oxide layer on the surface of the silicon wafer;
[0025] Step 3, coating the mixed solution on the surface of the thin oxide layer of the silicon wafer, and then performing the second thermal diffusion doping.
[0026] Wherein, in step 1, a photoresist is used to define an undoped region on the silicon wafer, thereby exposing the surface of the undoped region, and then a silicon nitride layer is formed on the surface of the undoped region. The main function of the silicon layer is as an impurity blocking layer, so its thickness should be thick enough to prevent impurities from entering the non-doped region. In the present invention, the thickness of ...
Embodiment 3
[0030] When the doped region of the MOS device proposed by the present invention is doped, the following steps are sequentially included:
[0031] Step 1, put the silicon wafer into the diffusion furnace for the first thermal diffusion;
[0032] Step 2, introducing oxygen into the above-mentioned diffusion furnace to form a thin oxide layer on the surface of the silicon wafer;
[0033] Step 3, coating the mixed solution on the surface of the thin oxide layer of the silicon wafer, and then performing the second thermal diffusion doping.
[0034] Wherein, in step 1, a photoresist is used to define an undoped region on the silicon wafer, thereby exposing the surface of the undoped region, and then a silicon nitride layer is formed on the surface of the undoped region. The main function of the silicon layer is as an impurity blocking layer, so its thickness should be thick enough to prevent impurities from entering the non-doped region. In the present invention, the thickness of ...
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