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Charge pump circuit of high-speed switch circuit

A high-speed switch and charge pump technology, applied in the direction of conversion equipment without intermediate conversion to AC, can solve the problems of slow speed of charge pump circuit, voltage increase, and reduction ratio cannot be satisfied, etc.

Inactive Publication Date: 2014-03-26
ZHENGZHOU DANDIAN TECH SOFTWARE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The corresponding speed of the charge pump circuit of the high-speed switching circuit of this structure is relatively slow, which cannot meet the requirements of the modern high-speed switching circuit for the charge pump circuit of the high-speed high-speed switching circuit, and the ratio of voltage increase and decrease cannot meet the requirements of the current circuit.

Method used

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  • Charge pump circuit of high-speed switch circuit

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Embodiment Construction

[0011] Below in conjunction with accompanying drawing, the present invention is described in detail.

[0012] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0013] like figure 1 Shown is the circuit principle diagram of the charge pump circuit of the high-speed switching circuit of the present invention.

[0014] A charge pump circuit for a high-speed switching circuit, the circuit comprising: four PNP bipolar transistors, four NPN bipolar transistors, two voltage sources, one constant current source, four resistors, and an N-type MOS tube And P-type MOS tube. The four PNP bipolar transistors are: PNP first bipolar transistor P1, second bipolar tra...

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Abstract

The invention discloses a charge pump circuit of a high-speed switch circuit. The circuit comprises a PNP (Plug-and-Play) type first bipolar transistor (P1), a second bipolar transistor (P2), a third bipolar transistor (P3), a fourth bipolar transistor (P4), a NPN (Negative-Positive-Negative) fifth bipolar transistor (N5), a sixth bipolar transistor (N6), a seventh bipolar transistor (N7), an eighth bipolar transistor (N8), a first resistor (R1), a second resistor (R2), a third resistor (R3), a fourth resistor (R4), a constant current source (JI); a first voltage source (JV1), a second voltage source (JV2), a P-type MOS (Metal Oxide Semiconductor) pipe (MP1) and a N-type MOS pipe (MN1). The charge pump circuit has the benefits that due to the circuit structure, the charge transmission time is reduced, the speed is improved, and input voltage has a larger output change range.

Description

technical field [0001] The invention relates to a charge pump circuit of a high-speed switch circuit, in particular to a charge pump circuit suitable for a high-speed switch circuit with a high output voltage range in the high-speed switch circuit. Background technique [0002] Charge pumps, also known as switched capacitor voltage converters, can step up or down the input voltage and can also be used to generate negative voltages. It is a circuit commonly used in switching circuits. In some high-speed switching circuits, the speed of the charge pump is generally higher, and the corresponding speed is required to be faster. The charge pump in the prior art controls the charging and discharging of the flying capacitor in a certain way through its internal FET switch array, so that the input voltage is multiplied or reduced by a certain factor (0.5, 2 or 3), so as to obtain the required output voltage . The corresponding speed of the charge pump circuit of the high-speed sw...

Claims

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Application Information

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IPC IPC(8): H02M3/07
Inventor 吴勇余力王晓娟
Owner ZHENGZHOU DANDIAN TECH SOFTWARE