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Method for directed self-assembly process/proximity correction

A directional self-assembly and self-assembly technology, applied in the field of manufacturing integrated circuits, can solve the problems of high computing cost and cumbersome

Active Publication Date: 2014-05-07
GLOBALFOUNDRIES U S INC MALTA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Also, due to the cumbersome nature of the method, this method requires a higher computational cost

Method used

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  • Method for directed self-assembly process/proximity correction
  • Method for directed self-assembly process/proximity correction
  • Method for directed self-assembly process/proximity correction

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Embodiment Construction

[0025] The essence of the following embodiments is only exemplary, and is not intended to limit the present invention or the application and use of the present invention. Here, the term "model" means "as an example, example, or illustration." Therefore, any embodiments described herein are "exemplary" and do not necessarily represent a better implementation or superior to other embodiments. All the embodiments described herein are exemplary embodiments, so that those skilled in the art can make or use the present invention instead of limiting the scope of the present invention defined by the claims. In addition, the theories described or implied in the technical field to which the foregoing invention belongs, the prior art, the content of the invention, and the subsequent embodiments are not intended to be limiting.

[0026] The present invention is a method for designing a photomask to form a pre-patterned opening in a photoresist layer on a substrate, wherein the photoresist l...

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Abstract

The invention relates to a method for directed self-assembly process / proximity correction. In an exemplary embodiment, a method of fabricating an integrated circuit includes designing an optical photomask for forming a pre-pattern opening in a photoresist layer on a semiconductor substrate, wherein the photoresist layer and the pre-pattern opening are coated with a self-assembly material that undergoes directed self-assembly (DSA) to form a DSA pattern. The step of designing the optical photomask includes using a computing system, inputting a DSA target pattern, and using the computing system, applying a DSA model to the DSA target pattern to generate a first DSA directing pattern. Further, the step of designing the optical photomask includes using the computing system, calculating a residual between the DSA target pattern and the DSA directing pattern, and using the computing system, applying the DSA model to the first DSA directing pattern and the residual to generate a second, updated DSA directing pattern.

Description

Technical field [0001] The embodiments of the present disclosure relate to methods of manufacturing integrated circuits. In more detail, the embodiment of the disclosure relates to a directional self-assembly process / proximity correction (DSA PC) method in integrated circuit (IC) design. Background technique [0002] Semiconductor devices generally include a circuit net formed on a substrate. The device can be composed of several circuit wiring layers, and various interconnections are used to connect these circuit wiring layers with each other and the transistors located below them. Generally speaking, forming vias or contact vias is a part of the manufacturing process, which can be transferred to another layer and filled with metal to form interconnections, so that all layers in the circuit are electrically interconnected with each other. Prior art methods for forming interconnects generally rely on a series of photolithography and etching steps to define the position and size...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/027G03F7/16
CPCG16Z99/00G06F30/398G06F2119/18G03F7/0002G03F1/30G03F1/36G03F1/38G03F1/68G21K5/00G06F30/333
Inventor A·拉特波夫
Owner GLOBALFOUNDRIES U S INC MALTA