Transistor control circuit and power supply unit

Abstract

The present application discloses a transistor control circuit and a power supply device. The transistor control circuit includes: a transistor including a gate electrode with a gate field plate, a drain electrode, and a layer formed between the gate field plate and the drain electrode. a control electrode on top of the inter-insulator film; a comparator circuit that compares the drain voltage of the transistor with a reference voltage; and an electrode control circuit that generates a voltage to be given to the control electrode based on a comparison result from the comparator circuit.

Description

technical field [0001] Embodiments discussed herein relate to high electron mobility transistor control circuits, as well as power supply devices. Background technique [0002] Recently, there has been active development of electronic devices (compound semiconductor devices) in which a gallium nitride (GaN) layer and an AlGaN layer are sequentially formed on a substrate made of a material such as sapphire, SiC, GaN or Si, and the GaN layer is used as an electron transit layer. [0003] The bandgap of GaN is 3.4eV, which is large compared with 1.1eV of Si and 1.4eV of GaAs. For this reason, such semiconductor compound devices are expected to operate at high voltages. [0004] One such compound semiconductor device is a GaN-based high electron mobility transistor (HEMT). Hereinafter, such GaN-based high electron mobility transistors will be referred to as GaN-HEMTs. A HEMT is a field-effect transistor that includes a high-mobility two-dimensional electron gas (2DEG) induce...

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Problems solved by technology

[0008] However, when trying to operate GaN-HEMTs at higher frequencies and higher voltages, there is a problem that only providing field plates is not enough to reduce the on-resistance between source and drain

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