Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor structure and manufacturing method thereof

A manufacturing method and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as operational limitations and complex manufacturing methods

Active Publication Date: 2016-06-15
MACRONIX INT CO LTD
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the complex structure of this storage device also complicates the manufacturing method
In addition, operability is limited by design

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor structure and manufacturing method thereof
  • Semiconductor structure and manufacturing method thereof
  • Semiconductor structure and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] Figure 1A to Figure 9B A method for fabricating a semiconductor structure according to an embodiment is shown. Please refer to Figure 1A , the semiconductor unit 102 is arranged on the substrate 104 . The semiconductor unit 102 may extend in a strip shape in adjacent (or non-overlapping) first regions 106 and second regions 108 . The cross-sectional view of the semiconductor unit 102 located in the first region 106 drawn along the line AB and the cross-sectional view drawn along the line CD in the second region 108 can be as follows Figure 1B shown.

[0016] Please refer to Figure 1B , the semiconductor unit 102 may include conductive stripes 110 and dielectric stripes 112 alternately formed on the substrate 104 . A capping layer 114 may be formed on the topmost one of the dielectric stripes 112 . The material of the capping layer 114 may include a dielectric material. In an embodiment, for example, the material of the capping layer 114 may include nitride or ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a semiconductor structure and a manufacturing method thereof. The manufacturing method comprises the following steps: forming an arrayed semiconductor unit on a substrate; forming a material layer on the semiconductor unit; forming a first patterned mask layer on the semiconductor unit; The first patterned mask layer has a part of the mask opening corresponding to the semiconductor unit and exposing the material layer; removing part of the material layer exposed by the mask opening, leaving the material layer on the sidewall of each semiconductor unit exposed by the mask opening part to form a spacer structure.

Description

technical field [0001] The present invention relates to a semiconductor structure and a manufacturing method thereof, in particular to a 3D stacked memory structure and a manufacturing method thereof. Background technique [0002] Storage devices are used in many products, such as storage elements in MP3 players, digital cameras, computer files, and so on. With the increase of applications, the demand for storage devices also tends to be smaller in size and larger in storage capacity. To meet this demand, it is necessary to manufacture memory devices with high device density. [0003] As device critical dimensions have been reduced to the technological limit, designers have developed a method to increase the density of memory devices by using 3D stacked memory devices to achieve higher memory capacity while reducing the cost per bit. However, the complex structure of this storage device also complicates the manufacturing method. In addition, operability is limited by desi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/8247H01L27/115H10B69/00
CPCH10B41/35
Inventor 胡志玮叶腾豪施彦豪
Owner MACRONIX INT CO LTD