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Thin film forming method and thin film forming apparatus

A thin-film and film-forming technology, which is used in devices for coating liquid on surfaces, gaseous chemical plating, coatings, etc., and can solve the problems of inability to directly apply processes and low coverage performance

Active Publication Date: 2014-06-18
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In recent years, with the change in the structure of semiconductor devices and the refinement of devices, the coverage performance under the conventional LP-CVD film formation conditions is low, and there is a problem that the conventional process cannot be directly applied.
This problem becomes a problem especially when forming a film with a STI (Shallow Trench Isolation) shape and a hole-shaped pattern with a high aspect ratio.

Method used

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  • Thin film forming method and thin film forming apparatus
  • Thin film forming method and thin film forming apparatus
  • Thin film forming method and thin film forming apparatus

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Embodiment Construction

[0021] Hereinafter, various embodiments of the present application will be described in detail with reference to the drawings. In the following detailed description, numerous specific details are set forth in order to provide a thorough understanding of the application. However, those skilled in the art should be able to understand the present application without such a detailed description. In other examples, well-known methods, procedures, systems, and components are not described in detail in order to avoid making the various embodiments difficult to understand.

[0022] Next, the thin film forming method and thin film forming apparatus of the present invention will be described. Hereinafter, the present invention will be described by taking the case of forming an HTO (High Temperature Oxide) film as an example. Also, in this embodiment, to use figure 1 The illustrated batch-type vertical heat treatment apparatus will be described as an example of a thin film forming app...

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Abstract

The invention provides a thin film forming method and a thin film forming apparatus. The thin film forming method for forming a thin film on a workpiece accommodated within a reaction chamber includes a first operation of supplying a first source gas and a second source gas into the reaction chamber, and a second operation of stopping the supply of the first source gas, supplying the second source gas into the reaction chamber and setting an internal pressure of the reaction chamber higher than an internal pressure of the reaction chamber set in the first operation. The first operation and the second operation are alternately repeated a plurality of times.

Description

technical field [0001] The present invention relates to a thin film forming method and a thin film forming device. Background technique [0002] Conventionally, LP-CVD (low pressure CVD; Chemical Vapor Deposition; Chemical Vapor Deposition; Chemical Vapor Deposition) has been used to form a silicon oxide film or the like. When forming a film by LP-CVD, a gas flow whose flow rate is adjusted to be constant is flowed for a predetermined time in a pressure-controlled reaction chamber, and film formation is performed to a target film thickness. [0003] In recent years, with changes in the structure of semiconductor devices and refinement of the devices, there has been a problem that the deposition performance under conventional LP-CVD film formation conditions is low, and conventional processes cannot be directly applied. This problem becomes a problem especially when forming a film with a STI (Shallow Trench Isolation) shape and a hole-shaped pattern with a high aspect ratio....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/31C23C16/455H01L21/205
CPCH01L21/00C23C16/52C23C16/402C23C16/00B05D1/36C23C16/45557C23C16/45523C23C16/455H01L21/02164H01L21/02271C23C16/40H01L21/0228H01L21/28556
Inventor 山本和弥伊藤勇一
Owner TOKYO ELECTRON LTD