Method for monitoring stability and uniformity of ion implanter

Abstract

The invention discloses a method for monitoring the stability and the uniformity of an ion implanter. The method includes the steps that firstly a germanium amorphous barrier layer is formed on the surface of a sample wafer substrate to be measured so as to reduce the ion implantation depth, in the monitored ion implanter, of subsequent wafers, high temperature annealing is conducted so as to form doped silicon germanium alloy with good conductivity on the surfaces of the wafers, therefore, common probes of a four-probe tester can be directly used for measuring RS accurately, and the effect that the stability and the uniformity of the ion implanter are monitored accurately is achieved. Due to the application of the method, the measuring cost is lowered, and the service life of a measuring machine is prolonged. Meanwhile, according to the method, the accuracy and the stability of RS measurement are effectively improved, the downtime risk caused by misjudgment is greatly reduced, and the productivity of the ion implanter is improved.

Description

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AI Technical Summary

Benefits of technology

This technology helps prevent damage or degrading performance during an experiment when measuring semiconductor devices such as solar cells. By forming a special layer called Geametanobility Barriers (GAB) between certain parts of the device's structure, it prevents dopants from entering them while testing their properties for better efficiency. Additionally, this technique allows for accurate measurements over longer periods without any issues like incorrect readings due to instability or unevenness. Overall, these improvements improve the quality control process and increase production capacity of the equipment involved.

Problems solved by technology

Technological Problem addressed in this patents relates to improving the accuracy and consistency of ion implants introduced onto substrates during fabricating electronic devices without causing defects like cracks or other issues related to the instability and nonuniform distribution of ion dosage near the surfaces being treated. Current methods involve either destructive testing or plasma scatter techniques, but these methods require special tools and facilities and lead to increased costs associated with each step. Additionally, they often introduce errors called lattice distortion, leading to lower reliabilities and reduced yield rates.

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