60 results about "Probe tester" patented technology

The invention discloses a method for testing a high-temperature and high-pressure corrosion rate of a multi-phase medium and relates to the technical field of corrosion rate testing, and the method is applied to a device for testing the high-temperature and high-pressure corrosion rate of the multi-phase medium and comprises the following steps of: respectively accessing corrosive gas and corrosive liquid into a gas-liquid stirring device and mixing them to form a gas-liquid mixture, accessing them into a preheater to be heated to the preset temperature; injecting the gas-liquid mixture into a high-temperature and high-pressure reactor through a gas-liquid mixture injection pipeline, and discharging it by a gas-liquid mixture discharge pipeline to form gas-liquid mixture fluid; confirming the corrosion rate of the to-be-detected metal in a gas-liquid mixture corrosion inductance probe through inductance change of an inductance probe tester. The method can solve the problems that the corrosion test in the present technology only can be executed in static environment so that dynamic environment in a pit is difficultly simulated, tested data isn't sufficiently accurate and the measuring speed is slower, and only the average corrosion rate in longer time can be obtained.

Provided is a device for generating map data of a probe tester and a method, comprising a data generating module, for generating original data of a wafer by using a wafer information file, wherein the file includes a plurality of characteristics of the wafer; an error detecting module, for detecting map error between a first coordinate of a chip and a second coordinate of the map chip in the original data corresponding to the chip on the wafer; a calibrating module, for computing correction, for compensating the map error between the first coordinate of the chip and the second coordinate of the map chip; and a coordinate correcting module, for correcting the coordinate of the map chip in the original data according to the correction. Therefore, no additional manual operation is required based on the original data related to the wafer to generate precise map data.

The invention discloses a device and a method for detecting the force electromagnetic coupling behavior of a giant magneto resistive film, and belongs to the technical field of engineering materials, structural deformation, mechanics experiment and electrical experiment. The device comprises a magnetic field generator, a giant magneto resistive film hysteresis loop measurement optical path, a film stress measurement optical path, and a film resistance probe tester. The giant magneto resistive film hysteresis loop measurement optical path comprises a laser, diaphragms, reflectors, a polarizer, an analyzer, a lens and a photoelectric detector; and the film stress measurement optical path comprises a laser, a spatial filter, a calibrator, reflectors, and a charge couple device (CCD) camera. A uniform magnetic field is provided by the magnetic field generator; the hysteresis loop is measured according to a magneto-optic Kerr effect; curvature of the surface of the film is measured by a multi-beam optical stress sensitivity technology; the stress of the film is obtained according to the relation expression of the curvature and the stress; the resistivity of a film material is measured by the film resistance probe tester; and coupling relational expressions of the resistance of the giant magneto resistive film and the magnetic induction density and stress of the film can be obtained finally.

A semiconductor substrate, probe card, and methods for stressing and testing dies on a semiconductor substrate are provided. The semiconductor substrate, typically a semiconductor wafer, comprises dies disposed thereon and a redistribution layer (RDL) for routing signals from a test circuit into dies on the substrate that are not currently under probe. The RDL includes look-ahead contacts associated with a first die set that are electrically connected by traces to dies of a second die set. Upon contact of elements of the probe tester with the look-ahead contacts, required Vcc power, GND ground potential and signals from the probe tester are routed through the traces to the die of the die set not currently under probe. The dies can comprise a built-in self-stress (BISS) circuit and/or a built-in self-test (BIST) circuit for implementing a stress or test sequence. The look-ahead contacts allow for overlapping or substantially simultaneously stressing and/or testing dies of dies of a die set currently under probe and dies of a second die set located prior to or after the current probe head position (i.e., not under probe).

The invention relates to a method of testing unloaded, large-area printed circuit boards having conductor tracks with a finger tester. According to the method according to the invention, the printed circuit boards are tested when subdivided into a number of segments, conductor tracks that extend beyond one segment being tested by means of capacitive measurement of the end points located in the respective segment, an interruption of the conductor track being established if one measured value of the capacitive measured values belonging to one conductor track differs significantly from other measured values.

A lot traceable printed circuit board (PCB) includes a substrate having thereon a patterned circuit layer and a working zone carrying production information related to the PCB itself. The working zone includes a plurality of code boxes, wherein each of the code boxes has a first probe region and second probe region. A single set of resistance test loop is disposed within the first probe region. Four sets of resistance test loops are disposed within the second probe region. A frying probe tester is used to probe the set of resistance test loops respectively for abstracting the production information recorded in the working zone.

An inspection device inspects a humidity sensor having a sensor portion and a circuit portion, which are integrated into one chip. The inspection device includes: an inspection chamber for accommodating a wafer, in which a plurality of humidity sensors are disposed as a sensor chip in a wafer state; a probe for contacting an electrode pad of the circuit portion; a tester electrically connected to the probe for inspecting electric properties of the humidity sensor; and a temperature-humidity control portion for controlling a temperature and a humidity in the inspection chamber.

A multifunctional automatic four-point probe tester comprises a vacuum suction sheet bearing table, a four-point probe assembly, a three-shaft driving mechanism, a camera and a main control computer. The four-point probe assembly is arranged on the three-shaft driving mechanism. The shooting direction of the camera right faces the vacuum suction sheet bearing table. The signal output end of the camera and the signal output end of the four-point probe assembly are connected with the signal input end of the main control computer. The control signal input end of the three-shaft driving mechanism is connected with the control signal output end of the main control computer. The suction sheet bearing table of the multifunctional automatic four-point probe tester can be used for fixing broken silicon wafer samples, so that the tester is made to have the function of fixing samples and prevent samples form moving in the testing process. The camera is used for shooting the position and the shape of a silicon wafer, and images can be used for locating, so that the fragment processing function of the equipment is achieved. A four-point probe three-dimensional driving mechanism is controlled to enable a four-point probe to move and be located in the suction piece bearing table. Moreover, the driving mechanism is downward pressed through a Z-axis to enable the probe to be automatically pressed downward to realize automatic measuring.

The invention provides a preparation method of a vanadium dioxide (VO2) thin film of extremely narrow hysteretic curve width and high temperature coefficient of resistance (TCR). The preparation method is characterized by comprising the following two steps of: 1, performing direct current sputtering on an Al2O3 substrate by using a metal vanadium target of a magnetron sputtering coating instrument to prepare a metal vanadium thin film; and 2, placing the metal vanadium film in a quick annealing furnace to perform oxidation treatment, then taking the oxidized metal vanadium thin film out and placing in air to naturally cool to obtain a polycrystalline VO2 thin film. The preparation method of the VO2 thin film of extremely narrow hysteretic curve width and high temperature coefficient of resistance provided by the invention is simple and practical and has high repeatability; and the analysis of a scanning electron microscope and a four-probe tester shows that the prepared VO2 thin film has a nano flaky structure, the hysteretic curve width is only about 0.4 DEG C, almost overlapping is realized and the thin film has extremely high TCR.

The invention discloses a method for improving the vanadium dioxide phase change amplitude by regulating the sputtering power. A vanadium dioxide film is prepared through a mode combing magnetron sputtering with rapid thermal annealing, a metal vanadium film is prepared in a magnetron sputtering mode, the sputtering power in the sputtering process adopts multiple parameters between 40-160 W, meanwhile, in order to achieve the purpose of the same film thickness, the sputtering time is adjusted according to power parameters, then rapid oxidizing annealing is conducted in a rapid annealing furnace, deposition of the film and preparation of vanadium dioxide is separated in the whole preparation process, the process requirements for preparation and regulation are lowered, in addition, by setting the multi-power parameters in the sputtering process, the effect of regulating the microstructure of the vanadium dioxide film is achieved, and the purpose of regulating and improving the vanadium dioxide phase change amplitude is achieved. The phase change characteristics of the prepared vanadium dioxide film are researched through a four-probe meter, and the method which is simple in preparation process, easy to control and capable of regulating and improving the VO2 phase change amplitude is designed.

The invention discloses a method for testing a sheet resistance in a preparation process of a selective transmission electrode battery. The method comprises the following steps of 1, designing a grid pattern; 2, producing a monitor plate substrate; 3, coating photoresist on the monitor plate substrate, and masking a positioning hole and four probe positioning holes by utilizing the photoresist in identical thickness; 4, producing a monitoring screen printing plate; 5, adopting the monitoring screen printing plate to print a monitor plate according to a battery piece production process; 6, etching and washing a non-mask area of the monitor plate; 7, adopting a four-probe tester, inserting four probes into the corresponding probe positioning holes, and testing the sheet resistance of the non-mask area of the monitor plate; 8, adjusting the washing parameter of the selective transmission electrode battery according to the tested sheet resistance result, and repeating the washing step in step 6 and the step 7 until the sheet resistance value of the monitor plate is standard, thereby determining the washing parameters of the selective transmission electrode battery. Due to the adoption of the method, the test error phenomenon caused by pressing a grid line part in the test process can be avoided, the test process is fast and convenient, the test flow is simplified, and the test time is saved.

The invention discloses a resistivity monitoring method used in a P type epitaxial wafer production. The resistivity monitoring method comprises the following steps of step 1, forming a P type epitaxial layer on the surface of a test epitaxial wafer by adopting a same process as the product epitaxial wafer; step 2, performing test preprocessing on the test epitaxial wafer: step 21, washing the surface of the formed P type epitaxial layer by deionized water and forming a natural oxide film; step 22, performing spin-drying; and step 3, performing resistivity test for the P type epitaxial layer of the test epitaxial wafer by a four-point probe. According to the resistivity monitoring method, test error can be lowered, the test efficiency for resistivity can be improved, and the test cost can be lowered; and meanwhile, the production efficiency of products can be relatively improved, and the production cost can be relatively lowered.

The invention discloses a probe positioning structure of a four-probe instrument, which comprises an insulated probing head and four probes, wherein each probe is fixedly sleeved an elastic insulated spacer ring the inner diameter of which is matched with the diameter of the probe, the sum of wall thicknesses of the elastic insulated spacer rings sleeved on two adjacent probes is equal to the value obtained by subtracting the diameter of one probe from the center distance between the two adjacent probes; and four elastic insulated spacer rings are arranged at the same height on the probes, the distance from the elastic insulated spacer ring to the lower end of the metal probe accounts for 1/4 to 1/2 of the total length of the probe; simple technology, high spacer ring precision and low cost can be achieved in case that the probe spacer rings are made of tetrafluoro elastic insulated material, and each probe is sleeved with the tetrafluoro elastic insulated ring, thereby not only separating the four probes from each other quite stably and increasing the strength of the probes, but also precisely controlling the mechanical shift of the probes to further guarantee the electric insulating property between the probes as well as the constant pressure elasticity and excellent electric contact of the probes.

The present invention allows non-wafer form devices to be tested on a standard automatic wafer-probe tester or other automated test or measurement device commonly employed in semiconductor or allied industries (e.g., flat panel display, data storage, or the like) processes. The present invention accomplishes this by providing a low-profile carrier for temporarily mounting a non-wafer form device. The low-profile carrier holds the non-wafer form device (e.g., an integrated circuit chip, a thin film head structure, one or more molded array packages, etc.) magnetically into recesses which are machined or otherwise formed in the low-profile carrier.

The invention discloses a novel graphene heating material. A nano-metal material is doped into graphene to reduce the resistivity of a pure graphene circuit. The shape and form of a nanowire are observed by using an optical microscope and a scanning electron microscope; and the electrical performance of an obtained sample is tested and analyzed by using a four-probe tester. According to the novelgraphene heating material, the silver nanowire is doped between graphene layers, and sintering and pressing operations are carried out, so that the interface resistance and electron transport barriersof graphene sheets are reduced and the resistivity of graphene/silver nanowire composite ink is reduced to 1/18 of the original resistivity; and meanwhile, the resistivity of graphene/copper nanowirecomposite ink is also reduced to 1/5 of the original resistivity through doping a copper nanowire between the graphene layers. According to a method disclosed by the invention, graphene instead of graphene oxide is adopted, so that the resistivity of the circuit can be obviously greatly reduced, and the method has the advantages of being simple in experimental operation, low in cost, short in preparation period, high in feasibility, nontoxic and free of pollution, and can be operated at room temperature.

Provided is Si3N4-TiZrN2-TiN composite conductive ceramic. Raw materials for synthesizing the composite conductive ceramic comprise Si3N4, ZrN, TiN, Y2O3, La2O3 and AlN. The final product of the composite conductive ceramic comprises an Si3N4 phase, a TiN phase and a solid solution TiZrN2 phase of metal nitride. Due to addition of AlN, volatilization caused by adding of Al2O3 in a conventional mode is avoided, and the surface of the final product to which AlN is added can be smoother than that of the product to which Al2O3 is added. The invention further provides a liquid phase sintering method of the Si3N4-TiZrN2-TiN composite conductive ceramic. The Si3N4-TiZrN2-TiN composite conductive ceramic has the advantages that electrical resistance is low, wherein the sample resistance tested by an SX1944 four-probe tester for the composite conductive ceramic is at the 10-2 omega.cm order which is far lower than that of like products; the mechanical strength is high, wherein the load of the composite conductive ceramic is 10 kg, the pressurizing time is 5 s, the measured Vickers hardness of the sample is 14.7 GPa, the sample breaking tenacity calculated through the hardness indentation quadrangle expansion crack length is 7.8 MPa.m 0.5, and the original strength and hardness of silicon nitride ceramic are kept.

The invention discloses a method for monitoring the stability and the uniformity of an ion implanter. The method includes the steps that firstly a germanium amorphous barrier layer is formed on the surface of a sample wafer substrate to be measured so as to reduce the ion implantation depth, in the monitored ion implanter, of subsequent wafers, high temperature annealing is conducted so as to form doped silicon germanium alloy with good conductivity on the surfaces of the wafers, therefore, common probes of a four-probe tester can be directly used for measuring RS accurately, and the effect that the stability and the uniformity of the ion implanter are monitored accurately is achieved. Due to the application of the method, the measuring cost is lowered, and the service life of a measuring machine is prolonged. Meanwhile, according to the method, the accuracy and the stability of RS measurement are effectively improved, the downtime risk caused by misjudgment is greatly reduced, and the productivity of the ion implanter is improved.

The invention relates to an experimental detection device and method for preparing graphene by a laser. The device comprises a movable platform, a reaction vessel is arranged on the movable platform and integrally positioned in a heating cover, a powered-on electrode and a large electrode block are arranged in the reaction vessel, the powered-on electrode is connected with a voltage controller, the large electrode block is connected with a double-electric-logging four-probe tester, and a laser generation system is arranged on the upper portion of the reaction vessel. According to the device, laser-shocked plasmas can sufficiently contact with an electrode base and are deposited on the electrode base. The temperature of water in the reaction vessel is gradually increased by the heating cover, and generation experiments of the graphene are detected in real time, so that optimal temperature suitable for preparing the graphene is acquired.

A system for inspecting signals of the circuits on a panel includes a moveable stage with a transparent work area for holding the panel to be tested; a probe for contacting the panel; a tester for receiving a signal via the probe; an image sensing device disposed in an opposite side to the probe with respect to the stage; and image display device coupled to the image sensing device. The image display device includes a screen having a cross mark. When the system is operating, the probe is aligned with the image sensing device such that the captured image of the probe is displayed on the center of the cross.