Resistivity monitoring method used in P type epitaxial wafer production

Abstract

The invention discloses a resistivity monitoring method used in a P type epitaxial wafer production. The resistivity monitoring method comprises the following steps of step 1, forming a P type epitaxial layer on the surface of a test epitaxial wafer by adopting a same process as the product epitaxial wafer; step 2, performing test preprocessing on the test epitaxial wafer: step 21, washing the surface of the formed P type epitaxial layer by deionized water and forming a natural oxide film; step 22, performing spin-drying; and step 3, performing resistivity test for the P type epitaxial layer of the test epitaxial wafer by a four-point probe. According to the resistivity monitoring method, test error can be lowered, the test efficiency for resistivity can be improved, and the test cost can be lowered; and meanwhile, the production efficiency of products can be relatively improved, and the production cost can be relatively lowered.

Description

technical field [0001] The invention relates to a semiconductor integrated circuit manufacturing method, in particular to a resistivity monitoring method in the production of P-type epitaxial wafers Background technique [0002] In the manufacture of semiconductor integrated circuits, epitaxial layers, especially high-resistance epitaxial layers, are required in many places. Due to the high cost of the epitaxial process itself and the long process time, if there is a problem with the epitaxial process and the production of epitaxial wafers is still carried out, it will be There is a waste film, and the loss is relatively large. Therefore, in the prior art, it is necessary to monitor the resistivity in the production of epitaxial wafers. [0003] In the existing method, when the product epitaxial wafer is produced, it is necessary to form a test epitaxial wafer by adopting the same production process as the product epitaxial wafer, and monitor the resistivity of the epitaxia...

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Problems solved by technology

[0005] In the existing method, it often occurs that the epitaxial wafer is re-grown for re-testing. In the field of semiconductor integrated circuit manufacturing, the epitaxial growth process takes a long time and the cost is high, and the re-growth of the epitaxial wafer greatly increases the cost of test materials and test time. ; and if the test fails, the production of the product epitaxial wafers needs to be stopped, which also greatly reduces the production efficiency of the product, and relatively speaking, increases the production cost

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