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Method for improving vanadium dioxide phase change amplitude by regulating sputtering power

A technology of sputtering power and vanadium dioxide, which is applied in the field of increasing the phase transition amplitude of vanadium dioxide by regulating sputtering power, can solve the problems of high process requirements of the phase transition amplitude, etc., and achieves short preparation time, easy control, and process conditions. low effect

Inactive Publication Date: 2018-06-19
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This technology allows for easier manufacturing of stable vanadic acidic compounds with controlled properties by creating a layer on their surface that can be easily separated from other layers during processing or use.

Problems solved by technology

This patented technical solution described in the text discusss how reducing heat dissipated from electronic devices used within homes leads to improved air conditioned environments such as houses without compromising their safety measures like ventilation systems. To achieve optimal performance levels, intelligently controllable windows made up of multiple layers of transparent conductors called vanadic oxides must meet specific criteria set forth below: 1) High solar load demands cause vapor pressure inside rooms due to increased cooling demand compared to traditional windows, making them difficult to regulate properly. Therefore, a new approach is needed to create highly efficient greenhouse gas controlled windows capable of efficiently shading out near red wavelength regions while minimizing energy waste.

Method used

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  • Method for improving vanadium dioxide phase change amplitude by regulating sputtering power
  • Method for improving vanadium dioxide phase change amplitude by regulating sputtering power
  • Method for improving vanadium dioxide phase change amplitude by regulating sputtering power

Examples

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Embodiment 1

[0025] 1) Sapphire cleaning

[0026] The sapphire used is double-polished sapphire with (001) crystal face purchased in the market, and the size is 1cm*1cm. Put the sapphire sheet into deionized water, acetone and absolute ethanol in sequence for ultrasonic cleaning, each cleaning time is 20 minutes, to remove the inorganic and organic impurities on the surface; then wash it with deionized water, and finally clean the sapphire substrate Put into absolute ethanol for later use. 2) Preparation of metal vanadium thin film

[0027] The cleaned sapphire substrate is placed in the vacuum chamber of the DPS-Ⅲ ultra-high vacuum target magnetron sputtering coating machine, and the metal vanadium with a mass purity of 99.99% is used as the target material, and the argon gas with a mass purity of 99.999% is used as the target material. Working gas, background vacuum 4.0×10 -4 Pa, the substrate is not heated during the sputtering process, the argon gas flow rate is 48mL / min, the sputte...

Embodiment 2

[0031] 1) Sapphire cleaning

[0032] The sapphire used is double-polished sapphire with (001) crystal face purchased in the market, and the size is 1cm*1cm. Put the sapphire sheet into deionized water, acetone and absolute ethanol in sequence for ultrasonic cleaning, each cleaning time is 20 minutes, to remove inorganic and organic impurities on the surface; then wash it with deionized water, and finally clean the sapphire substrate Put into absolute ethanol for later use. 2) Preparation of metal vanadium thin film

[0033] Place the cleaned sapphire substrate in the vacuum chamber of a DPS-Ⅲ ultra-high vacuum target magnetron sputtering coating machine, use metal vanadium with a mass purity of 99.99% as the target material, and use argon gas with a mass purity of 99.999% as the target material. Working gas, background vacuum 4.0×10 -4 Pa, the substrate is not heated during the sputtering process, the flow rate of argon gas is 48mL / min, the working pressure of sputtering is...

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PUM

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Abstract

The invention discloses a method for improving the vanadium dioxide phase change amplitude by regulating the sputtering power. A vanadium dioxide film is prepared through a mode combing magnetron sputtering with rapid thermal annealing, a metal vanadium film is prepared in a magnetron sputtering mode, the sputtering power in the sputtering process adopts multiple parameters between 40-160 W, meanwhile, in order to achieve the purpose of the same film thickness, the sputtering time is adjusted according to power parameters, then rapid oxidizing annealing is conducted in a rapid annealing furnace, deposition of the film and preparation of vanadium dioxide is separated in the whole preparation process, the process requirements for preparation and regulation are lowered, in addition, by setting the multi-power parameters in the sputtering process, the effect of regulating the microstructure of the vanadium dioxide film is achieved, and the purpose of regulating and improving the vanadium dioxide phase change amplitude is achieved. The phase change characteristics of the prepared vanadium dioxide film are researched through a four-probe meter, and the method which is simple in preparation process, easy to control and capable of regulating and improving the VO2 phase change amplitude is designed.

Description

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Claims

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Application Information

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Owner TIANJIN UNIV
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