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Insulated-gate bipolar transistor and preparation method thereof

A bipolar transistor, insulated gate technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problem of high cost of carrier storage layers

Active Publication Date: 2016-01-06
ZHUZHOU CRRC TIMES SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The embodiment of the present invention provides an insulated gate bipolar transistor and its preparation method to solve the problem of high cost of forming the carrier storage layer by injecting high-energy particles

Method used

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  • Insulated-gate bipolar transistor and preparation method thereof
  • Insulated-gate bipolar transistor and preparation method thereof
  • Insulated-gate bipolar transistor and preparation method thereof

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preparation example Construction

[0053] In view of this, an embodiment of the present invention provides a method for manufacturing an insulated gate bipolar transistor, including:

[0054] providing a semiconductor substrate of a first doping type;

[0055] A well region of the second doping type is formed inside the front surface of the semiconductor substrate, and a gate of the insulated gate bipolar transistor is formed on the front surface of the semiconductor substrate, and the gate covers part of the well region surface;

[0056] forming an emitter region of the first doping type on the surface of the well region;

[0057] Etching the emitting region, forming a groove in the emitting region, the groove passing through the emitting region;

[0058] Injecting particles of the first doping type into the semiconductor substrate through the groove, forming a carrier with a carrier concentration greater than that of the semiconductor substrate on the side of the well region away from the gate sub-storage ...

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Abstract

The invention discloses an insulated-gate bipolar transistor and a preparation method thereof, wherein the insulated-gate bipolar transistor comprises a semiconductor substrate of a first doped type; a well region of a second doped type which is arranged in the front surface of the semiconductor substrate; a carrier accumulation layer which is arranged on the side, facing the back side of the semiconductor substrate, of the well region, is larger than the semiconductor substrate in carrier concentration and is arranged in a groove in the center of the well region; emission regions of the first doped type which are arranged on two sides of the groove and arranged in the well region; gates which are arranged on two sides of the groove and are arranged on the surface of the semiconductor substrate; an emission electrode covering the surfaces of the gates and the groove; a collector region of the second doped type which is arranged in the back side of the semiconductor substrate; and a collector electrode arranged in the side, opposite to the semiconductor substrate, of the collector region. The insulated-gate bipolar transistor is low in conductivity voltage drop and relatively low in production cost.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to an insulated gate bipolar transistor and a preparation method thereof. Background technique [0002] The insulated gate bipolar transistor (Insulate-GateBipolarTransistor, IGBT) is a composite full-control type composed of a giant transistor (GiantTransistor, GTR) and a metal-oxide-semiconductor field-effect transistor (Metal-Oxide-Semiconductor-Field-Effect-Transistor, MOSFET). Voltage-driven power semiconductor devices have the advantages of high input impedance of MOSFET and low conduction voltage drop of GTR. They have the characteristics of high operating frequency, simple control circuit, high current density and low on-state voltage. They are widely used in industrial field of automation. [0003] How to further reduce the turn-on voltage drop of the insulated gate bipolar transistor is an inevitable problem faced by the continuous development of industrial automation...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/331H01L29/739H01L29/06H01L21/265
CPCH01L21/265H01L29/06H01L29/66325H01L29/7393H01L29/7396
Inventor 罗海辉肖海波谭灿健
Owner ZHUZHOU CRRC TIMES SEMICON CO LTD
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