Unlock instant, AI-driven research and patent intelligence for your innovation.

Charge pump circuit system

A circuit system and charge pump technology, applied in the circuit field, can solve problems such as high-voltage path hazards, device damage, breakdown, etc., and achieve the effect of avoiding damage and improving safety

Active Publication Date: 2014-07-02
GIGADEVICE SEMICON (BEIJING) INC
View PDF3 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, when these charge pumps stop working and start discharge (discharge), if the discharge speed is different, the capacitive coupling (couple) phenomenon will occur, so that the pump output voltage is coupled to a higher or lower voltage, these undesirable Higher voltage / lower voltage will cause serious harm to the high-voltage path behind, and even break down and destroy the devices in the high-voltage path. This is a situation we should try our best to avoid

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Charge pump circuit system
  • Charge pump circuit system
  • Charge pump circuit system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Embodiment one, a charge pump circuit system, including:

[0037] Two or more charge pumps;

[0038] The two or more charge pumps include positive pressure and / or negative pressure charge pumps;

[0039] When the positive pump positive pump is included, it also includes a first current source circuit and a first external circuit corresponding to the positive pressure charge pump one-to-one; as shown in FIG. 3(a), the first external circuit includes a source Grounded first N-type MOS transistor MN1 and first high-voltage switch MH1; the source of the first high-voltage switch MH1 is connected to the drain of the first N-type MOS transistor MN1, the gate is connected to the reference voltage source Vdis, and the drain Connected to the output terminal of the corresponding positive pressure charge pump; the first current source circuit includes a first current source Idis1 and a second N-type MOS tube MN2; the input terminal of the first current source Idis1 is connected to a hig...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A charge pump circuit system comprises two or more charge pumps. When the charge pumps are positive-pressure charge pumps, the charge pump circuit system further comprises a first current source circuit and first external circuits corresponding to the positive-pressure charge pumps one to one. The first external circuits comprise first N-type MOS tubes with sources grounded and first high-voltage switch tubes. The input end of a first current source in the first current source circuit is connected with a high electric level and the output end of the first current source in the first current source circuit is connected with drains of second N-type MOS tubes and grids of the second N-type MOS tubes. Grids of the first N-type MOS tubes are connected with the grids of the second N-type MOS tubes and the sources of the first N-type MOS tubes are connected with sources of the second N-type MOS tubes. When the charge pumps are negative-pressure charge pumps, the charge pump circuit system further comprises a second current source circuit and second external circuits corresponding to the negative-pressure charge pumps one to one. The second external circuits comprise first P-type MOS tubes with sources connected with a high electric level and second high-voltage switch tubes. The output end of a second current source in the second current source circuit is grounded, and the input end of the second current source in the second current source circuit is connected with sources of second P-type MOS tubes and grids of the second P-type MOS tubes. The sources of the first P-type MOS tubes are connected with the sources of the second P-type MOS tubes and grids of the first P-type MOS tubes are connected with the grids of the second P-type MOS tubes.

Description

Technical field [0001] The invention relates to the field of circuits, in particular to a charge pump circuit system. Background technique [0002] In many systems / chips, a charge pump (Pump) circuit is needed. Take Flash memory as an example. In order to complete various required operations, such as Program, Erase, Read, etc., it needs to use positive pump and negative pressure charge pump. (Negative Pump) The charge pump circuit for various purposes including the Negative Pump circuit. [0003] In a system where multiple different charge pumps coexist, there is a phenomenon that is easy to overlook but can cause serious harm. Since the output voltage of these charge pumps is usually high voltage, positive high voltage (much higher than the power supply voltage) or negative high voltage, it needs to pass through a high voltage path (such as a series of HV Switch high voltage switches) before it can be transmitted to other circuit parts that need these high voltages. , To achiev...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H02M1/32
Inventor 张现聚苏志强丁冲
Owner GIGADEVICE SEMICON (BEIJING) INC