Method and system for computing stray capacitance of single-layer solenoid
A technology of parasitic capacitance and calculation method, which is applied in the direction of calculation, electrical digital data processing, special data processing applications, etc., and can solve problems such as difficult to accurately calculate the scope of application, reduce the quality factor, and affect the self-resonant frequency
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[0047] The calculation method of the present embodiment is divided into four steps to carry out:
[0048] The first step is to obtain the parameters H, R, N, and d of the solenoid. A model of a solenoid with a longitudinal section view such as Figure 2~3 Shown, and the definition of each parameter is shown in Table 1.
[0049] Table 1 Definition of parameters of the solenoid
[0050] parameters
definition
R
Radius of the solenoid
N
Number of turns of the solenoid
H
Solenoid Height
d
Wire Diameter of Solenoid
Y
Turn spacing of a solenoid
ε 0
Vacuum permittivity
[0051] In the second step, the intermediate parameter Y of the solenoid is calculated. From Table 1 and figure 1 (a) The known parameter Y is the turn spacing of the solenoid, and its calculation is shown in formula (1).
[0052] Y = H N - - ...
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