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Integrated transformer balun with enhanced common-mode rejection for RF, microwave, and mmWave integrated circuits

A millimeter wave and microwave technology, applied in variable inductor/transformer, inductor/transformer/magnet manufacturing, discontinuous variable inductor/transformer, etc., can solve problems involving transformer common mode signal power and other issues

Inactive Publication Date: 2017-05-03
NOKIA TECH OY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The common-mode conversion gain is defined similarly, but with reference to the common-mode signal power at the transformer secondary

Method used

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  • Integrated transformer balun with enhanced common-mode rejection for RF, microwave, and mmWave integrated circuits
  • Integrated transformer balun with enhanced common-mode rejection for RF, microwave, and mmWave integrated circuits
  • Integrated transformer balun with enhanced common-mode rejection for RF, microwave, and mmWave integrated circuits

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Embodiment Construction

[0086] According to an example embodiment of the present invention, the asymmetrical impedance of the primary coil (the asymmetric impedance capacitively and inductively coupled to the secondary coil), the common-mode rejection of the transformer balun can be enhanced. The self-resonant frequency of the transformer balun can also be enhanced by this method due to the reduced need for added capacitance at either or both of the primary and secondary coil center taps. Intuitively, the improved common-mode rejection of the transformer balun—and the concomitant reduction in capacitance required on the transformer secondary to maximize common-mode rejection—is due to the introduction of a rotating asymmetrical. This rotational asymmetry seeks to counteract the impedance asymmetry in the primary coil.

[0087] To be compatible with manufacturing technology, integrated circuit design rules may restrict drawn shapes to have edges oriented at 45 or 90 degrees with respect to the die e...

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Abstract

Example embodiments of apparatus and methods provide improved common mode rejection ratios in high frequency transformer baluns. According to an example embodiment of the present invention, an apparatus includes a first winding of at least one turn forming a primary coil, having a first differential lead and a second differential lead oriented in a first direction, the primary coil being formed in a first differential lead of the primary coil in the first conductive layer above the substrate and grounded; and a second winding of at least one turn forming the secondary coil, having a third differential lead and a fourth differential lead oriented in a second direction The differential leads, the second direction is offset from the first direction by an angle greater than zero degrees and less than 180 degrees, and the secondary coil is formed in a second conductive layer separated from the first conductive layer by an insulating layer.

Description

technical field [0001] The field of the invention relates to radio frequency, microwave, and millimeter wave circuits used in communication, radar, and imaging systems. Background technique [0002] RF, microwave, and millimeter wave integrated circuits are critical to the functionality of wireless communication, radar, and imaging systems. Integrated circuit design at these frequencies requires the use of on-chip passive electrical components such as resistors, inductors, capacitors, and transformers. Transformers and balanced-to-unbalanced (balun) devices are commonly used in wireless communications. Transformers are often used to couple differential RF, microwave, or mmWave frequency signals between functional circuit blocks. Baluns are used for single-ended to differential conversion or differential to single-ended conversion of signals. The effectiveness of this conversion should be maximized in a useful balun design to maximize signal power in the desired mode (eg, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01F19/00H01F41/00
CPCH01F21/12H01F41/041H01F2021/125H01F2027/2809Y10T29/4902H01F27/29H01F41/04H01F27/292
Inventor P·S·斯沃亨A·P·汤利
Owner NOKIA TECH OY
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