An axial pneumatic drive planetary rotating device

Abstract

The invention relates to an axial pneumatically driven planetary rotation device, which includes an autorotation disk that drives the substrate to rotate, a hollow shaft with a vent hole inside is installed in the center of the bottom surface of the autorotation disk, and a vent hole communicating with the hollow shaft is arranged in the inner center of the autorotation disk The top surface of the self-rotating disk is provided with a plurality of planetary disk grooves arranged along the circumference, and the planetary disks are installed in the planetary disk grooves, and the center of the bottom surface of each planetary disk is provided with a planetary disk shaft, and the bottom of the planetary disk shaft The end is installed in the self-rotating disk and the planetary disk can rotate around the rotation axis of the planetary disk; the outer periphery of the main vent hole is provided with sub-ventilation holes extending to the bottom of each planetary disk groove, and the bottom surface of the planetary disk is provided with a plurality of holes arranged in the circumferential direction. Beveled groove. In the present invention, through the rotation of the autorotation disk, the gas is continuously introduced from the central axis, and the planetary disk rotates around its own axis under the drive of air force, so that the planetary disk not only rotates with the rotation disk around the hollow shaft, but also around the rotation axis of its own planetary disk, that is, planetary motion .

Description

technical field [0001] The invention relates to semiconductor material manufacturing equipment, and further refers to a substrate planetary rotation motion device used in MOCVD and SiC epitaxy equipment, so as to make the deposited film on the surface of the substrate more uniform. Background technique [0002] GaN and SiC materials, as the third-generation semiconductor materials, have attracted people's attention. With the deepening of device research and development, GaN and SiC thin films are widely used in LEDs and power electronic devices, and the preparation of GaN and SiC thin films has become more and more important. The preparation method of GaN and SiC films is commonly used chemical vapor deposition method, which is a process in which several different gaseous compounds are passed into the vicinity of the substrate, and the gaseous compounds are decomposed and recombined at high temperature to form new solid substances. For example, GaN is in NH 3 and TMGa at 1...

AI Technical Summary

Problems solved by technology

Conventional mechanical transmission is impossible to make the substrate perform planetary motion at such a high temperature. Due to heat resistance of materials, thermal expansion, chemical corrosion, etc., the transmission will be unstable or even stuck.

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