Semiconductor Structure Including A Transistor Having A Layer Of A Stress-creating Material, And Method For The Formation Thereof

Abstract

The invention relates to a semiconductor structure comprising a transistor provided with a stress-creating material layer, and a method for the formation of the semiconductor structure. The semiconductor structure is disclosed including a transistor, the transistor including one or more elongated semiconductor regions, each of the one or more elongated semiconductor regions having a channel region, a gate electrode, wherein the gate electrode is provided at least at two opposite sides of each of the one or more elongated semiconductor regions, and the stress-creating material layer, the stress-creating material layer providing a variable stress, wherein the stress-creating material layer is arranged to provide a stress at least in the channel region of each of the one or more elongated semiconductor regions, the stress provided in the channel region of each of the one or more elongated semiconductor regions being variable.

Description

technical field [0001] The present disclosure relates generally to the field of integrated circuits, and more particularly, to integrated circuits including transistors and / or other circuit components with stress-creating materials. Background technique [0002] Integrated circuits contain a large number of circuit components, including especially field effect transistors. In field effect transistors, the gate electrode may be separated from the channel region by providing electrical insulation between the gate electrode and the channel region. Source and drain regions may be formed adjacent to the channel region. In addition to planar transistors, transistors used in integrated circuits may include transistors in which the channel region is formed in one or more elongated semiconductor regions, such as fins. Transistor types in which the channel region is formed in the one or more elongated semiconductor regions include FinFET transistors and Tri-Gate transistors. [000...

AI Technical Summary

Problems solved by technology

[0008] However, the stress in the channel region of a transistor produced by a conventional material layer with internal stress is usually essentially fixed after the deposition of the material and cannot be adjusted thereafter.

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