Semiconductor device and manufacturing method thereof

Abstract

To provide a semiconductor device that suppresses the occurrence of cracks and / or cracks during wire bonding of a semiconductor chip in an extended state. The semiconductor device 1 of the embodiment includes: a first chip group 5 including a first semiconductor chip 4 mounted on a circuit base material 2; a second chip group 10 including a plurality of second semiconductor chips stacked on the first chip group 5; chip9. The second semiconductor chips 9 are stacked in steps such that the lowermost second semiconductor chip 9A protrudes from the first chip group 5 . The wiring board 2 and the second semiconductor chip 9 are electrically connected by the second metal lead 13 . The second metal lead 13 is connected to the second electrode pad 11 of the lowermost second semiconductor chip 9A by only one ball bonding.

Description

[0001] Related Patent Applications [0002] This application enjoys the priority of the basic application based on Japanese Patent Application No. 2013-61231 (filing date: March 25, 2013). This application includes the entire contents of the basic application by referring to this basic application. technical field [0003] Embodiments of the present invention relate to a semiconductor device and a method of manufacturing the same. Background technique [0004] In order to achieve miniaturization and higher functionality of semiconductor devices, stacked semiconductor devices in which a plurality of semiconductor chips are stacked and sealed in one package have been put into practical use. For example, in order to increase the capacity of a semiconductor memory, memory chips are stacked in multiple stages on a wiring board. When wire bonding is applied to electrically connect the wiring board and the memory chip, a structure in which a plurality of memory chips are stacked ...

AI Technical Summary

Problems solved by technology

If this continuous implementation of three bonding steps from the semiconductor chip group on the lower side to the overhanging semiconductor chip on the lowermost layer, to the stitch connection on the bump, and then to the ball connection on the stitch, not only the accumulated bonding impact during bonding, since the protruding part may be bent during bonding, cracks and / or cracks are likely to occur on the semiconductor chip at the bottom layer, etc.

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