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dry etching method

A technology of dry etching and etching, applied in the field of dry etching, which can solve the problems of low productivity and increased cost

Active Publication Date: 2016-08-17
ULVAC INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, additional equipment for wet etching is required for round grinding, which not only lowers productivity, but also requires waste liquid treatment, etc., resulting in increased costs.

Method used

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Embodiment Construction

[0024] Hereinafter, a dry etching method according to an embodiment of the present invention will be described with reference to the accompanying drawings. The dry etching method takes a single crystal or polycrystalline silicon substrate (hereinafter simply referred to as substrate W) used in a crystalline solar cell as the processing object, and forms a texture on the surface thereof. structure. In addition, the structure of a crystalline solar cell is well known, so a detailed description thereof will be omitted here.

[0025] figure 1 The dry etching apparatus EM which can implement the dry etching method of this embodiment is shown. The following description will be made with the direction of the shower plate facing the substrate W as below and the direction of the substrate W facing the shower plate as above.

[0026] The dry etching device EM has a vacuum chamber 1, which is divided into a film forming chamber 12. The vacuum chamber 1 can be decompressed and maintaine...

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Abstract

The present invention provides a low-cost dry etching method, which can efficiently manufacture a silicon substrate with a textured structure, the textured structure can effectively prevent light scattering, and can also be well covered when forming a prescribed thin film in a subsequent process Film-forming. It includes a first step of introducing a first etching gas containing a fluorine-containing gas, a halogen-containing gas, and oxygen into a film-forming chamber (12) under reduced pressure in which a silicon substrate (W) is placed, and applying electric power for discharging to etch silicon. the substrate surface; and a second step of introducing a second etching gas containing a fluorine-containing gas into a film-forming chamber under reduced pressure in which the silicon substrate etched in the first step is disposed, applying electric power for discharge, and further Etch the surface of the silicon substrate.

Description

technical field [0001] The present invention relates to a dry etching method for forming a textured structure on the surface of a silicon substrate, in particular to a dry etching method for forming a texture structure on the surface of a silicon substrate in the manufacturing process of a crystalline solar cell, which has the effect of preventing light scattering with high efficiency. dry etching method for textured structures. Background technique [0002] In crystalline solar cells using single crystal or polycrystalline silicon substrates, conventional methods have been to dry-etch the surface of the silicon substrate to form concavities and convexities, and then roughen the surface (impart a textured structure) so that the light incident on the surface of the silicon substrate is reduced. The reflection of light is reduced to realize the improvement of photoelectric conversion efficiency. Furthermore, it is known that, for example, in Patent Document 1, when slicing a ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/3065H01L31/04
CPCH01L31/02363Y02E10/50
Inventor 佐藤宗之竹井日出夫池田智坂尾洋介大竹文人
Owner ULVAC INC