radiation detection circuit

A radiation detection and circuit technology, applied in dosimeters, etc., can solve problems such as the complexity of digital automation systems

Active Publication Date: 2017-09-15
北京中科微投资管理有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, this detection circuit is too complex to satisfy some digital automation systems

Method used

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Embodiment Construction

[0021] Embodiments of the present invention are described in detail below.

[0022] Examples of the described embodiments are shown in the drawings, wherein like or similar reference numerals designate like or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention. The following disclosure provides many different embodiments or examples for implementing different structures of the present invention. To simplify the disclosure of the present invention, components and arrangements of specific examples are described below. Of course, they are only examples and are not intended to limit the invention.

[0023] The invention provides a PMOS radiation detection circuit based on an operational amplifier. Below, will pass through an embodiment of the present invention to figure 2 Th...

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Abstract

The present invention provides a radiation detection circuit, comprising: a first PMOS transistor for sensing radiation to be measured; a first amplifier connected to the first PMOS transistor; a second PMOS transistor not to sense radiation to be measured; and a second a second amplifier connected to the PMOS transistor; and a comparison module, used to compare the outputs of the first amplifier and the second amplifier, and amplify the difference for output. The invention simplifies the structure of the radiation detection circuit and greatly reduces the power consumption compared with the prior art.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a radiation detection circuit. Background technique [0002] In space, many electronic devices will be exposed to certain radiation environments. In order to ensure the reliability of these electronic devices, it is necessary to detect the total dose of radiation. Because once the total radiation dose exceeds a certain amount, it will cause the failure of the electronic system. [0003] PMOS total dose radiation detectors mainly include radiation-sensitive field-effect transistors made by a specific process. The MOSFET threshold voltage drifts due to oxide traps and interface trap charges generated after irradiation. By calibrating the relationship between the threshold voltage drift and the radiation dose, the threshold voltage drift is measured to obtain the radiation dose. Generally speaking, after NMOS is irradiated, oxide trap charges cause its threshold voltage t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01T1/02
Inventor 刘梦新刘鑫赵发展韩郑生
Owner 北京中科微投资管理有限责任公司
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