Nor Flash-based regional cycle storage method

A circular storage and area technology, applied in the direction of memory address/allocation/relocation, etc., can solve the problems of long time consumption, tediousness, and affecting the service life of memory chips, so as to achieve the effect of ensuring service life and short time consumption

Inactive Publication Date: 2015-03-25
NINGBO SANXING MEDICAL & ELECTRIC CO LTD
View PDF4 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method is cumbersome and time-consuming, and long-

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] The present invention will be further described below in conjunction with specific examples.

[0016] A kind of regional circular storage method based on Nor Flash of the present invention comprises the following steps:

[0017] (1), set a storage area, the storage area is composed of multiple continuous storage spaces, and point the head pointer and tail pointer to the starting address of the first storage space, a storage space is generally 4K bytes, and each piece The storage capacity of the storage space is the same;

[0018] (2), allocate an additional piece of shared storage space to the storage area, and allocate the shared storage space after the last piece of storage space, so that the last piece of storage space and the shared storage space form a continuous storage space, that is, the shared storage space is Opened next to the end of the storage area, the head pointer and tail pointer can be continuously and directly entered from the last storage space into ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a Nor Flash-based regional cycle storage method. The Nor Flash-based regional cycle storage method comprises the following steps: a storage area is set; a shared storage space is additionally allocated; a tail pointer moves down by a data storage space when one piece of data is accessed; when the tail pointer moves to a start address of the shared storage space, a head pointer moves down by a data storage space when one piece of data is accessed; when the tail pointer moves to the last data of the shared storage space and the shared storage space is not enough for storing one piece of data, a storage record is generated; meanwhile, the tail pointer circulates to the start address of the storage area; when the storage record is generated, the heat pointer and the tail pointer move down a data storage space when one piece of data is accessed; when the tail pointer moves to the last data, the storage record is generated; the heat pointer and the tail pointer move down a data storage space when one piece of data is accessed. The method is simple and short in time consumption; the service life of a storage chip can be ensured.

Description

technical field [0001] The invention relates to the technical field of memory chips, in particular to a Nor Flash-based area cycle storage method. Background technique [0002] In the field of smart terminals, since data storage such as load curves and event records requires relatively large space, low-cost Flash is applied to this field. Since smart terminals generally use single-chip microcomputers and generally do not have a system, Nand_Flash (need to process bad areas) is not suitable for this application environment, and only Nor_Flash can be used. Many manufacturers used Atmel's Flash before, such as AT45DB161D, AT45DB321D or the latest AT45DB321E. This kind of Flash is implanted with SRAM. Although it solves the problem of chip erasing, it also brings the problem of cost doubling. Ordinary Nor_Flash is suitable for products in this field. Its advantage is low cost, and its disadvantage is that the algorithm is complicated, because it can write data only after the c...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G06F12/02
Inventor 郑坚江沈开远
Owner NINGBO SANXING MEDICAL & ELECTRIC CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products