All-solid-state self-Raman femtosecond laser

Abstract

The invention relates to the technical field of short pulse laser and specifically discloses an all-solid self-Raman femtosecond laser device. The femtosecond laser device comprises a semiconductor laser device end face pumping system, a dichroic mirror, a Yb-doped tungstate crystal, two broadband negative dispersion mirrors, a beam splitter mirror, a coupling output mirror, and a semiconductor saturable absorption mirror arranged perpendicular to a light path of the beam splitter mirror, wherein the dichroic mirror, the two broadband negative dispersion mirrors, the beam splitter mirror and the semiconductor saturable absorption mirror form a femtosecond laser resonant cavity; and the dichroic mirror, the two broadband negative dispersion mirrors, the beam splitter mirror and the coupling output mirror form a Raman resonant cavity. The invention adopts a composite cavity composed of the femtosecond laser resonant cavity and the Raman resonant cavity and the laser crystal with a stimulated Raman scattering effect is arranged in the composite cavity, so that frequency conversion is realized by utilizing a nonlinear effect of the laser crystal in a femtosecond laser oscillator and Raman laser having a wavelength around 1140 nm is directly obtained. The femtosecond laser device has the characteristics of unique output wavelength, compact structure and high practicability.

Description

technical field [0001] The invention relates to the technical field of short pulse lasers, in particular to an all-solid-state self-Raman femtosecond laser. Background technique [0002] Femtosecond laser has outstanding characteristics such as narrow pulse width and high peak power. Domain exploration and development provide powerful tools. [0003] At present, Ti:Sapphire femtosecond laser is the femtosecond laser with the most mature technology and the most extensive application fields. Solid-state laser materials doped with rare earth elements are another important class of laser materials. Among them, laser materials and lasers doped with Yb rare earth ions, compared with Ti:sapphire lasers, have simple energy level structures, lower quantum defects, and broadband emission spectra, and can be pumped by high-power InGaAs semiconductor lasers. Therefore, the link of energy transmission is reduced, the laser conversion efficiency is also greatly improved, and the cost o...

AI Technical Summary

Problems solved by technology

[0004] However, titanium sapphire lasers and Yb-doped material lasers are limited by the energy level structure of the laser gain material and can only output a specific wavelength. For example, the output wavelength of the titanium sapphire laser is around 800nm, and the output wavelength of the Yb-doped material laser is around 1030nm.

With the deepening of research, the single-band femtosecond laser can no longer meet the increasing application requirements, so the generation method of femtosecond laser with more bands has become an urgent problem to be solved

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