YVO4 femtosecond laser device capable of emitting laser having wavelength around 1134 nm

Abstract

The invention relates to the technical field of short pulse laser and specifically discloses a Yb:YVO4 femtosecond laser device capable of emitting laser having a wavelength around 1134 nm. The femtosecond laser device comprises a semiconductor laser device end face pumping system, a dichroic mirror, a Yb:YVO4 crystal, two broadband negative dispersion mirrors and a broadband output mirror which are sequentially arranged in a propagation direction of a light path, wherein the dichroic mirror, the broadband negative dispersion mirrors and the broadband output mirror form a femtosecond laser resonant cavity; the Yb:YVO4 crystal is a laser gain crystal; and the broadband output mirror is a coupling output mirror of the laser device. The femtosecond laser device adopts the Yb:YVO4 crystal, the semiconductor laser device end face pumping system and the broadband femtosecond laser resonant cavity, and the Yb:YVO4 laser crystal with a stimulated Raman scattering effect and the broadband optical device are arranged in the cavity, so that frequency conversion is realized by utilizing a nonlinear effect of the Yb:YVO4 laser crystal in a femtosecond laser oscillator and Raman femtosecond laser having a wavelength around 1134 nm is directly obtained. The femtosecond laser device has the characteristics of unique output wavelength, compact structure and high practicability.

Description

technical field [0001] The invention relates to the technical field of short pulse lasers, in particular to a femtosecond laser with a wavelength of 1134nm Yb:YVO4. Background technique [0002] Femtosecond laser has outstanding characteristics such as narrow pulse width and high peak power. Domain exploration and development provide powerful tools. [0003] At present, Ti:Sapphire femtosecond laser is the femtosecond laser with the most mature technology and the most extensive application fields. Solid-state laser materials doped with rare earth elements are another important class of laser materials. Among them, laser materials and lasers doped with Yb rare earth ions, compared with Ti:sapphire lasers, have simple energy level structures, lower quantum defects, and broadband emission spectra, and can be pumped by high-power InGaAs semiconductor lasers. Therefore, the link of energy transmission is reduced, the laser conversion efficiency is also greatly improved, and th...

AI Technical Summary

Problems solved by technology

[0004] However, titanium sapphire lasers and Yb-doped material lasers are limited by the energy level structure of the laser gain material and can only output a specific wavelength. For example, the output wavelength of the titanium sapphire laser is around 800nm, and the output wavelength of the Yb-doped material laser is around 1030nm.

With the deepening of research, the single-band femtosecond laser can no longer meet the increasing application requirements, so the generation method of femtosecond laser with more bands has become an urgent problem to be solved

Images