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First and second magnetoresistive sensors formed from first and second sections of the layer stack

A technology for a magnetoresistive sensor and sensor device, which is applied in the direction of transmitting sensing components, instruments, magnetic recording, etc. using an electric/magnetic device, can solve the problems of high production workload and cost, increased price of XMR sensors, safety features, and inability to identify.

Active Publication Date: 2018-04-13
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Traditional solutions include redundant concepts featuring two independently manufactured sensors, which are expensive in terms of production effort and cost
Traditional solutions also include security algorithms with only limited performance, which cause unrecognizable errors
As a result, the price of XMR sensors increases significantly along with their functional safety features

Method used

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  • First and second magnetoresistive sensors formed from first and second sections of the layer stack
  • First and second magnetoresistive sensors formed from first and second sections of the layer stack
  • First and second magnetoresistive sensors formed from first and second sections of the layer stack

Examples

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Embodiment Construction

[0035] Example embodiments will now be described more fully with reference to the accompanying drawings, in which some example embodiments are illustrated. In the drawings, the thickness of lines, layers and / or regions may be exaggerated for clarity.

[0036] Therefore, while the exemplary embodiments are capable of various modifications and alternative forms, embodiments thereof are shown by way of example in the drawings and described in detail herein. It should be understood, however, that there is no intention to limit example embodiments to the particular forms disclosed, but on the contrary, example embodiments are to cover all modifications, equivalents, and alternatives falling within the scope of the invention. Throughout the description of the drawings, the same reference numerals refer to the same or similar elements.

[0037] It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected...

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PUM

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Abstract

Embodiments relate to a sensor device comprising a layer stack (600) comprising at least a ferromagnetic layer and a nonmagnetic layer formed on a common substrate (620). The sensor device (600) further comprises at least a first magnetoresistive sensor element (711) provided by the first section (611) of the layer stack (600). The first magnetoresistive sensor element (711) is here configured to generate a first signal. The sensor device (600) further comprises a second magnetoresistive sensor element (712) provided by the second section (612) of the layer stack (600). The second magnetoresistive sensor element (712) is here configured to generate a second signal for verifying the first signal.

Description

technical field [0001] Embodiments relate to sensor devices, or more particularly to sensor devices comprising magnetoresistive sensor elements. Background technique [0002] The magnetoresistive effect includes a large number of different physical phenomena, all of which have in common that the resistance of an impedance element can be modified by the behavior of a magnetic field passing through the impedance element. Techniques that exploit the magnetoresistance effect are sometimes referred to as "XMR techniques", where X denotes the diversity of effects that can be addressed here. [0003] One example is the anisotropic magnetoresistance (AMR) effect, which is based on the fact that in a (nano)thin conducting layer the resistance can be changed by changing the angle between an external magnetic field and the direction of current flow within the layer. This effect can be explained by distorting the atomic orbitals due to the spin orientation in the magnetic field and thu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01D5/18H10N50/01H10N50/80
CPCG01R33/093H10B61/00H10N59/00G11B5/3909G11B5/3903G11B5/3948G11B5/3961H10N50/01
Inventor J·齐默H·威特施尼格
Owner INFINEON TECH AG