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Deep silicon etching machine and its wafer protection device

A technology for deep silicon etching and device protection, used in microstructure devices, manufacturing microstructure devices, decorative arts, etc., can solve problems such as negative effects of process flow, serrated damage, wafer edge etching, etc., to improve the pass rate , The effect of preventing etching damage and avoiding losses

Active Publication Date: 2016-12-07
苏州工业园区纳米产业技术研究院有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, most of the products produced by deep silicon etching machines are thinned wafers with a thickness of 400 μm and an etching depth of 380 μm. Erosion, saw-tooth damage, negative impact on the current and subsequent process flow

Method used

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  • Deep silicon etching machine and its wafer protection device
  • Deep silicon etching machine and its wafer protection device
  • Deep silicon etching machine and its wafer protection device

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Embodiment Construction

[0022] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0023] see Figures 1 to 4 A deep silicon etching machine and its wafer protection device described in a preferred embodiment of the present invention can effectively protect the edge area of ​​the wafer 9 from being damaged by etching during the deep silicon etching process, including Reaction chamber 11, support table 8 arranged in reaction chamber 11, drive chamber 10 arranged below reaction chamber 11, drive device arranged in drive chamber 10, drive device drives support table 8 to move up and down, set in reaction chamber 11 With chip protector. The wafer protection device includes a protection piece 1 and a support piece 2 supporting the protection piece 1 . The ...

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PUM

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Abstract

The invention relates to the technical field of semiconductor production processes, and especially relates to a deep silicon etching machine table and a wafer protection device thereof. The deep silicon etching machine table disclosed by the invention comprises a reaction cavity, a support table arranged in the reaction cavity and used for supporting a wafer, a drive cavity arranged below the reaction cavity, and a drive device arranged in the drive cavity, wherein the drive device drives the support table to move up and down, and the wafer protection device used for covering the non-etching area of the wafer is further arranged in the reaction cavity. With the deep silicon etching machine table and the wafer protection device disclosed by the invention, the edge area of the wafer is protected from being damaged by etching during a deep silicon etching flow, the structure is simple, and the operation is convenient.

Description

technical field [0001] The invention relates to the technical field of semiconductor production technology, in particular to a deep silicon etching machine and a wafer protection device thereof. Background technique [0002] Micro-Electro-Mechanical System (MEMS, Micro-Electro-Mechanical System) is a manufacturing technology platform developed on the basis of semiconductor manufacturing technology. MEMS devices use silicon as the main material, and hundreds or thousands of micro-electromechanical devices or complete MEMS can be manufactured on a silicon chip at the same time by using silicon micromachining technology. The assembly and packaging of microstructures in MEMS devices mainly rely on deep silicon etching technology, that is, to achieve interconnection by forming vertical conduction between chips and between chips. [0003] At present, most of the products produced by deep silicon etching machines are thinned wafers with a thickness of 400 μm and an etching depth o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00H01L21/67
Inventor 杜春辉沈家敏冯建炜
Owner 苏州工业园区纳米产业技术研究院有限公司
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